NJ01 INTERFET | Alldatasheet
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Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at TA = 25¡C Gate Current, Ig 10 mA Operating Junction Temperature, Tj +150°C Storage Temperature, Ts – 65°C to +175°C Devices in this Databook based on the NJ01 Process. Datasheet 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN421, IFN422 IFN423, IFN424 IFN425, IFN426 Datasheet DPAD1, DPAD2 DPAD5, DPAD10 PAD1, PAD2 PAD5 VCR7N At 25°C free air temperature: NJ01 Process Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 40 – 50 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 0.5 – 10 pA V GS = – 20V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 0.5 – 6 V V DS = 10V, ID = 1 µA Drain Saturation Current (Pulsed) I DSS 0.03 0.6 mA V DS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 175 µS V DS = 10V, VGS = ØV f = 1 kHz Common Source Input Capacitance C iss 2p F V DS = 10V, VGS = ØV f = 1 MHz Common Source Reverse Transfer CapacitanceCrss 0.9 pF V DS = 10V, VGS = ØV f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com G G S-D S-D Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate. Databook.fxp 1/13/99 2:09 PM Page F-2
Silicon Junction Field-Effect Transistor Gate Source V oltage in V olts Input Capacitance in pF Input Capacitance as a Function of V GS Gate Source V oltage in V olts 0.1 1 10 20 Feedback Capacitance in pF Feedback Capacitance as a Function of V GS Gate Source Cutoff Voltage in Volts Drain Saturation Current in µA Drain Saturation Current as a Function of V GS(OFF) 200 400 600 800 0 25 50 75 100 125 150 250 200 150 100 250 200 150 100 10k 100 0.1 1.0 Ambient Temperature °C Leakage Current in pA Leakage Current as a Function of Temperature Drain to Source V oltage in V olts 0 5 10 15 20 Drain Current in µA Drain Current as a Function of V DS Gate Source Cutoff V oltage in V olts Transconductance in µS Gfs as a Function of V GS(OFF) 0.1 1 10 20 VDS = Ø V VDS = 10 V VDS = Ø V VDS = 10 V 2.0 1.5 1.0 0.5 VGS = –2.0 V VGS = –1.5 V VGS = –1.0 V VGS = –0.5 V VGS = Ø V VGS(OFF) = Ð2.1 V Databook.fxp 1/13/99 2:09 PM Page F-3