NE021

NE021 CEL | Alldatasheet

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Technical content

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES

FEATURES

• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,

2 GHz Gain Compression

DESCRIPTION

NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications. 00 (CHIP) 07/07B 35 (MICRO-X)33 (SOT 23 STYLE) 39 (SOT 143 STYLE) E B FREQ. NF OPT G A ΓΓΓΓΓOPT (MHz) (dB) (dB) MAG ANG Rn/50 VCE = 10 V, IC = 20 mA 500 1.8 17.5 0.11 156 .20 1000 2.1 12.5 0.27 168 .16 1500 2.3 9.5 0.36 -156 .18 2000 2.6 7.5 0.43 -147 .21 NE02139 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. NF OPT G A ΓΓΓΓΓOPT (MHz) (dB) (dB) MAG ANG Rn/50 VCE = 10 V, IC = 5 mA 500 1.2 18.60 .36 69 .14 1000 1.5 13.82 .31 124 .12 1500 2.0 11.83 .50 165 .05 2000 2.4 9.36 .44 -175 .06 2500 2.6 7.82 .52 -161 .10 3000 3.6 7.51 .68 -141 .14 3500 3.7 6.31 .71 -139 .21 V CE = 10 V, IC = 20 mA 500 1.8 21.32 .16 149 .15 1000 1.9 16.15 .33 169 .13 1500 2.4 13.50 .46 -179 .09 2000 2.9 11.02 .53 -167 .08 2500 3.2 9.12 .57 -154 .14 3000 3.9 8.10 .62 -139 .27 3500 4.3 6.48 .67 -134 .42 NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C) PLEASE NOTE:PLEASE NOTE:PLEASE NOTE:PLEASE NOTE:PLEASE NOTE: The following part numbers from this datasheet are nonpromotive: NE02100 NE02133 NE02139 The following part numbers from this datasheet are discontinued: NE02107 NE02135 Please call sales office for details. California Eastern Laboratories

PART NUMBER NE02133 NE02135 NE02139 EIAJ1 REGISTERED NUMBER 2SC2351 2SC2149 2SC4092 PACKAGE OUTLINE 33 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz 4.5 4.5 4.5 |S21E|2 Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 0.5 GHz dB 15 18.5 f = 1 GHz dB 9 10 13 9 10 f = 2 GHz dB 4 5 5 5.7 NF MIN Minimum Noise Figure6 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz dB 1.5 V CE = 10 V, IC = 5 mA, 1.5 f = 1 GHz dB 1.5 3 f = 2 GHz dB 2.7 4.0 I CBO Collector Cutoff Current at VCB = 15 V, IE = 0 µA 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 2 V, IC = 0 µA 1.0 1.0 1.0 hFE Forward Current Gain at VCE = 10 V, IC = 20 mA 40 70 200 20 70 250 40 70 200 C CB Collector to Base Capacitance4 at R TH (J-C) Thermal Resistance (Junction to Case) °C/W 120 R TH (J-A) Thermal Resistance (Junction to Ambient) °C/W 666 600 500 PT5 Total Power Dissipation mW 150 290 500 200 fT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz 4.5 4.5 |S21|2 Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 0.5 GHz dB 18.5 18.5 f = 1 GHz dB 13 13 f = 2 GHz dB 5.5 6.5 5.5 6.5 NF MIN Minimum Noise Figure2 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz dB 1.5 1.5 VCE = 10 V, IC = 5 mA, f = 2 GHz dB 2.7 4.5 2.7 4.5 ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 µA 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 2 V, IC = 0 µA 1.0 1.0 hFE Forward Current Gain at VCE = 10 V, IC = 20 mA 20 70 250 20 70 250 C CB Collector to Base Capacitance4 at VCB = 10 V, IE = 0, f = 1 MHz pF 0.6 1.0 0.6 1.0 R TH (J-C) Thermal Resistance (Junction to Case) °C/W 70 90 R TH (J-A) Thermal Resistance (Junction to Ambient) °C/W 500 PT5 Total Power Dissipation mW 580 700 350 700 NE021 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Electronic Industrial Association of Japan. 2. Input and output are tuned for optimum noise figures. 3. Common base electrical charactristics see S-Parameters. 4. C CB measurement employs a three-terminal capacitance bridge 5. Minimum dissipations based on RTH (J-A) for applications without effective incorporating a guard circuit. The emitter terminal shall be heat sink, maximum dissipations based on RTH (J-C) for applications with connected to the guard terminal. effective heat sink. 6. Output and Input are tuned for minimum noise figure. PART NUMBER NE02100 NE02107 EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE 00 (CHIP) 07/07B 3 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX

Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V) VOLTAGE CURRENT CHARACTERISTICS NE02133 DC POWER DERATING CURVES Collector Current, I C (mA) Collector Dissipation, P C (mW) NE021 SERIES DEVICE CAPACITANCE Collector to Base Voltage, VCB (V) Emitter to Base Voltage, VEB (V) Collector to Base Capacitance, C CB (pF) Emitter to Base Capacitance, C EB (pF) 0 0.5 1 2 3 5 7 10 20 30 0.7 0.5 0.3 C CB C EB f =1 MHz IE = 0 WITH INFINITE HEAT SINK R TH(J-C) = 120˚ C/W MOUNTED ON AI 2O 3 SUBSTRATE (20X50X0.6") R TH(J-A) = 190˚C/W FREE AIR R TH(J-A) = 600˚C/W 800 600 400 200 0 50 100 150 200 Ambient Temperature, TA (°C) Total Power Dissipation, P T (mW) NE02135 DC POWER DERATING CURVES 800 0 50 100 150 200 600 400 200 NE02100 R TH(J-C) = 70˚C/W NE02107 R TH(J-C) = 90˚C/W R TH (J-A) = 500˚C/W NE02107 NE02100, NE02107 DC POWER DERATING CURVES Ambient Temperature, TA (°C) Total Power Dissipation, P T (mW) TYPICAL PERFORMANCE CURVES (TA = 25°C) ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 25 VCEO Collector to Emitter Voltage V 12 2 VEBO Emitter to Base Voltage V 3 IC Collector Current mA 70 TJ Junction Temperature °C 2003 TSTG Storage Temperature °C -65 to +2004 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Typical BVCER = 25 V for R ≤ 300 Ω. 3. Maximum TJ for the NE02133 and NE02139 is +150°C. 4. Maximum storage temperature for the NE02135 is -65 to +150°C. Maximum storage temperature for the NE02133 and NE02139 is -55 to 150°C. 0 50 100 150 200 400 300 200 100 1. Mounted On Al2O 3 Substrate (32x21x10mm) And Encapsulated In Epoxy Resin (R TH (J-A) = 267˚C/W 2. Mounted On Al2O 3 Substrate (18x29x0.8mm) RTH (J-A) = 370˚C/W 3. Mounted On Al2O 3 Substrate (10x15x0.8mm) RTH (J-A) = 490˚C/W 4. Free Air, RTH (J-A) = 666˚C/W 0.7 VCE = 10 V

TYPICAL PERFORMANCE CURVES (TA = 25°C) NE02107, NE02135 GAIN vs. FREQUENCY NE02133 GAIN vs. FREQUENCY Frequency, f (GHz) Frequency, f (GHz) MAG|S21|2 VCE = 10 V IC = 20 mA Gain (dB) MAG |S21|2 VCE = 10 V IC = 20mA 0 10 20 30 40 50 60 70

100 MHz

500 MHz

2 GHz

VCE = 10 V

1 GHz

Collector Current, IC (mA) Insertion Gain, |S |2 (dB) NE02107 INSERTION GAIN vs. COLLECTOR CURRENT Collector Current, IC (mA) Noise Figure, NF (dB) Frequency, f (GHz) Noise Figure, NF (dB) Associated Gain, G A (dB) VCE = 10 V IC = 5 mA NE02133 NE02100, NE02107, NE02135 G A NF NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY NOISE FIGURE vs. COLLECTOR CURRENT Gain (dB) 500 300 200 100 1 2 3 5 7 10 20 30 50 70 100 fT hFE VCE = 10 V 5.0 3.0 2.0 1.0 0.7 0.5 DC Forward Current Gain, h FE Collector Current, IC (mA) Gain Bandwidth Product, f T (GHz) GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V 2 GHz

0.5 GHz

NE02107, NE02135 1 2 3 5 7 10 20 30

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 (TA = 25°C) NE021 SERIES Coordinates in Ohms Frequency in GHz (VCE = 10 V, IC = 20 mA) NE02100 V CE = 10 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 K MAG 2 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 20 mA Notes: 1. S-Parameters include bond wires. BASE:Total 1 wire (s), 1 per bond pad, 0.0115 (291 µm) long each wire. COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.0072" (182 µm) long each wire. 2. Gain Calculations: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used.MSG = |S21| 2 |S12 S21| EMITTER: Total 2 wire (s), 1 per side, 0.015" (393 µm) long each wire. WIRE: 0.0007' (17.7 µm) dia., gold. j50 j25 j10 -j10 -j25 -j50 -j100 j100 010 25 50 100 S11

5 GHz

0.1 GHz

120˚ 90˚ 60˚ 30˚150˚ 180˚ -150˚ -120˚ -90˚ -60˚ -30˚

TYPICAL COMMON BASE SCATTERING PARAMETERS (TA = 25°C) NE02107B VCB = 10 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) 100 .79 175 1.77 -10 .01 106 1.01 -9 500 .79 170 1.78 -24 .01 111 1.02 -22 1000 .79 163 1.72 -44 .01 117 1.05 -40 1500 .83 157 1.71 -64 .03 109 1.09 -58 2000 .83 149 1.57 -87 .06 106 1.09 -75 2500 .87 145 1.53 -99 .08 103 1.08 -81 3000 .87 136 1.40 -122 .11 95 1.11 -96 3500 .87 126 1.21 -140 .13 86 1.10 -111 4000 .86 117 1.12 -164 .17 76 1.08 -125 VCB = 10 V, IC = 10 mA 100 .88 177 1.84 -6 .01 -31 1.01 -6 500 .88 171 1.84 -19 .01 112 1.00 -18 1000 .87 164 1.83 -38 .01 132 1.05 -36 1500 .90 159 1.82 -57 .03 118 1.08 -53 2000 .92 152 1.72 -76 .06 117 1.10 -69 2500 .95 144 1.68 -92 .08 108 1.09 -81 3000 .96 135 1.57 -113 .12 98 1.13 -96 3500 .96 125 1.45 -135 .15 88 1.12 -111 4000 .95 116 1.33 -156 .18 77 1.10 -126 VCB = 10 V, IC = 20 mA 100 .92 176 1.90 -6 .01 56 1.02 -6 500 .93 171 1.89 -19 .01 139 1.01 -18 1000 .92 164 1.89 -37 .01 129 1.05 -36 1500 .96 159 1.88 -55 .03 126 1.09 -53 2000 .97 152 1.81 -75 .06 119 1.10 -69 2500 1.01 142 1.75 -90 .09 110 1.09 -80 3000 1.02 132 1.67 -110 .12 100 1.13 -95 3500 1.03 121 1.55 -132 .15 89 1.13 -110 4000 1.02 112 1.42 -154 .18 79 1.12 -125 VCB = 10 V, IC = 40 mA 100 .95 176 1.93 -7 .01 -74 1.02 -7 600 .94 171 1.91 -20 .01 116 1.01 -19 1000 .94 163 1.91 -38 .01 133 1.05 -36 1500 .98 158 1.90 -57 .03 126 1.09 -53 2000 .99 151 1.83 -77 .06 119 1.10 -69 2500 1.04 141 1.81 -92 .09 111 1.09 -81 3000 1.05 132 1.72 -115 .12 100 1.13 -97 3500 1.05 120 1.58 -136 .15 88 1.13 -113 4000 1.03 111 1.46 -157 .18 77 1.10 -127 Note: 1. Gain Calculations: 0.671 22.648 -0.431 22.648 -1.429 22.625 -0.950 17.830 -0.857 14.574 -0.707 13.222 -0.601 11.167 -0.458 9.853 -0.317 8.686 -0.477 22.480 -0.808 22.504 -1.645 22.355 -1.076 17.559 -0.782 14.177 -0.574 12.816 -0.484 11.047 -0.427 9.688 -0.180 8.188 0.315 22.788 -0.850 22.765 -1.189 22.765 -0.960 17.970 -0.832 14.795 -0.727 12.888 -0.658 11.435 -0.532 10.142 -0.388 8.970 0.239 22.856 -0.583 22.810 -1.140 22.810 -0.901 18.016 -0.798 14.843 -0.727 13.034 -0.591 11.563 -0.502 10.226 -0.341 9.091 MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used.MSG = |S21| 2 |S12 S21| Coordinates in Ohms Frequency in GHz (VCB = 10 V, IC = 20 mA) j50 j25 j10 -j10 -j25 -j50 -j100 j100 010 25 50 100 S11

4 GHz

120˚ 90˚ 60˚ 30˚150˚ 180˚ -150˚ -120˚ -90˚ -60˚ -30˚ 1.6 1.2 0.8 0.4 S212.0 S12

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) Coordinates in Ohms Frequency in GHz (VCE = 10 V, IC = 20 mA) NE021 SERIES MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used.MSG = |S21| 2 |S12 S21| NE02107 VCE = 10 V, IC = 5 mA FREQUENCY S11 S21 S12 S22 K MAG 1 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) 100 .82 -36 13.90 157 .01 73 .95 -16 500 .70 -125 7.38 107 .07 35 .54 -47 1000 .68 -161 4.17 82 .08 25 .39 -59 1500 .68 -178 2.87 66 .09 24 .38 -68 2000 .68 170 2.18 53 .10 26 .37 -78 2500 .67 159 1.73 40 .11 22 .38 -90 3000 .67 151 1.49 28 .12 23 .40 -102 3500 .68 142 1.27 17 .13 19 .43 -112 4000 .68 134 1.16 6 .14 17 .45 -122 VCE = 10 V, IC = 10 mA 100 .69 -54 22.57 150 .01 69 .89 -23 500 .67 -145 9.37 100 .05 36 .39 -58 1000 .67 -172 5.00 79 .06 36 .27 -70 1500 .67 175 3.40 65 .08 37 .26 -77 2000 .67 165 2.57 53 .09 40 .25 -87 2500 .67 15 2.07 41 .11 35 .28 -97 3000 .67 146 1.80 30 .12 34 .31 -108 3500 .67 137 1.53 20 .14 30 .34 -116 4000 .67 130 1.41 8 .15 23 .36 -125 VCE = 10 V, IC = 20 mA 100 .58 -79 31.63 142 .01 65 .81 -32 500 .67 -161 10.57 95 .03 45 .28 -68 1000 .67 179 5.47 77 .04 46 .19 -78 1500 .67 168 3.70 64 .07 46 .19 -84 2000 .67 159 2.78 53 .09 48 .20 -96 2500 .67 150 2.26 42 .11 44 .23 -105 3000 .68 142 1.96 31 .12 39 .25 -114 3500 .67 134 1.68 21 .14 36 .28 -122 4000 .68 127 1.53 9 .16 27 .31 -128 VCE = 10 V, IC = 30 mA 100 .55 -96 35.99 137 .01 63 .75 -37 500 .67 -167 10.79 93 .02 48 .24 -69 1000 .68 176 5.52 75 .04 53 .17 -77 1500 .68 166 3.75 63 .07 52 .17 -83 2000 .68 158 2.81 52 .09 53 .18 -96 2500 .68 148 2.26 41 .11 46 .21 -106 3000 .68 141 1.96 30 .13 42 .24 -115 3500 .68 133 1.66 20 .14 38 .27 -123 4000 .68 126 1.51 9 .16 29 .30 -131 Note: 1. Gain Calculations: 0.236 35.562 1.157 24.914 1.192 18.752 1.028 16.271 1.065 13.383 1.057 11.669 1.008 11.227 1.066 9.175 0.984 9.749 0.170 35.001 0.774 25.470 1.205 18.622 1.041 15.998 1.077 13.207 1.058 11.658 1.063 10.601 1.065 9.238 0.947 9.806 0.085 33.535 0.489 22.728 0.821 19.208 0.907 16.284 1.071 12.933 1.052 11.355 1.074 10.096 1.046 9.080 1.023 8.803 0.022 31.430 0.345 20.230 0.628 17.170 0.783 15.036 0.928 13.385 1.081 10.227 1.116 8.867 1.119 7.802 1.101 7.249 j50 j25 j10 -j10 -j25 -j50 -j100 j100 010 25 50 100 S11

4 GHz S22

120˚ 90˚ 60˚ 30˚150˚ 180˚ -150˚ -120˚ -90˚ -60˚ -30˚ S21 30 S12

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) Coordinates in Ohms Frequency in GHZ (VCE = 10 V, IC = 20 mA) MAG = Maximum Available Gain MSG = Maximum Stable Gain NE02133 V CE = 10 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) 100 .80 -37 13.53 150 .03 73 .91 -18 200 .63 -63 10.48 129 .04 59 .72 -29 500 .37 -114 5.56 99 .09 61 .48 -38 1000 .27 -158 3.02 76 .15 60 .40 -41 1500 .27 172 2.16 63 .21 63 .34 -49 2000 .29 151 1.74 49 .27 58 .31 -62 VCE = 10 V, IC = 10 mA 100 .66 -48 19.53 139 .02 79 .81 -27 200 .46 -78 13.52 118 .03 58 .58 -35 500 .27 -129 6.29 93 .09 67 .38 -36 1000 .21 -169 3.31 74 .16 66 .34 -40 1500 .23 165 2.35 62 .23 64 .29 -47 2000 .26 146 1.87 50 .29 59 .26 -62 VCE = 10 V, IC = 20 mA 100 .51 -61 19.37 129 .02 79 .70 -32 200 .33 -91 15.04 109 .03 64 .48 -35 500 .21 -143 6.57 89 .08 71 .33 -32 1000 .19 -177 3.41 72 .16 69 .32 -37 1500 .21 160 2.41 61 .24 67 .26 -45 2000 .24 142 1.92 49 .30 59 .23 -59 Note: 1. Gain Calculations: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used.MSG = |S21| 2 |S12 S21| 0.497 29.861 0.909 27.001 1.010 18.522 1.005 12.847 1.006 9.524 1.013 7.369 0.235 29.897 0.761 26.539 0.900 18.444 0.993 13.157 1.007 9.593 1.011 7.438 0.178 26.542 0.477 24.183 0.795 17.908 0.988 13.039 1.039 8.914 1.031 7.022 j50 j25 j10 -j10 -j25 -j50 -j100 j100 010 25 50 100 S11

2 GHz S22

120˚ 90˚ 60˚ 30˚150˚ 180˚ -150˚ -120˚ -90˚ -60˚ -30˚ S21 20 S12

2 GHzS21

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) 100 0.545 -74 32.448 140 0.002 67 0.763 -38 500 0.593 -163 10.200 94 0.020 46 0.270 -80 1000 0.602 173 5.276 75 0.040 49 0.217 -89 1500 0.605 158 3.505 61 0.072 50 0.188 -93 2000 0.616 148 2.718 46 0.108 44 0.161 -110 2500 0.623 135 2.159 39 0.133 48 0.176 -120 3000 0.639 123 1.841 29 0.156 43 0.188 -128 3500 0.644 111 1.549 13 0.180 32 0.210 -135 4000 0.649 102 1.411 6 0.205 32 0.232 -142 0.023 28.395 0.368 19.530 0.664 16.500 0.890 14.393 0.960 12.430 1.075 9.441 1.125 8.030 1.099 6.974 1.069 6.656 100 0.666 -50 23.536 149 0.004 65 0.854 -28 500 0.592 -147 9.285 99 0.033 39 0.363 -72 1000 0.604 -179 4.955 77 0.051 39 0.276 -82 1500 0.595 163 3.288 63 0.073 39 0.240 -87 2000 0.609 152 2.527 46 0.109 36 0.195 -104 2500 0.615 139 2.022 39 0.132 41 0.204 -115 3000 0.632 126 1.726 28 0.152 38 0.212 -125 3500 0.642 114 1.439 12 0.175 27 0.233 -135 4000 0.649 104 1.315 5 0.199 27 0.256 -144 0.634 37.697 0.859 24.493 1.128 17.700 1.172 14.054 1.138 11.397 1.180 9.287 1.168 8.071 1.155 6.763 1.113 6.156 NE02135 VCE = 10 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) 100 .84 -36 13.82 156 .02 73 .94 -18 500 .68 -126 7.18 106 .08 35 .51 -53 1000 .66 -163 4.02 81 .09 27 .34 -66 1500 .65 178 2.75 64 .10 27 .31 -74 2000 .65 163 2.10 52 .12 30 .31 -83 2500 .66 151 1.68 39 .13 26 .31 -95 3000 .66 141 1.46 27 .14 26 .33 -106 3500 .67 129 1.24 17 .16 26 .36 -116 4000 .68 121 1.14 5 .17 23 .38 -127 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 30 mA 100 .58 -95 35.35 134 .01 59 .72 -40 500 .64 -169 10.11 91 .03 50 .22 -82 1000 .65 173 5.15 74 .06 55 .14 -97 1500 .65 162 3.49 62 .08 63 .14 -103 2000 .66 152 2.63 52 .11 54 .15 -112 2500 .66 141 2.10 39 .13 46 .17 -122 3000 .66 132 1.82 29 .15 42 .19 -129 3500 .67 122 1.54 20 .17 38 .22 -137 4000 .68 115 1.44 9 .20 31 .24 -146 See note on next page. Coordinates in Ohms Frequency in GHz (VCE = 10 V, IC = 20 mA) 0.275 35.484 0.958 25.276 1.016 18.563 1.103 14.446 1.058 12.315 1.095 10.207 1.086 9.052 1.089 7.748 0.970 8.573 1.982 36.428 1.428 23.189 1.445 17.244 1.210 14.212 1.115 11.942 1.142 9.815 1.110 8.698 1.094 7.477 1.060 6.881 NE021 SERIES j50 j25 j10 -j10 -j25 -j50 -j100 j100 010 25 50 100 S11 120˚ 90˚ 60˚ 30˚150˚ 180˚ -150˚ -120˚ -90˚ -60˚ -30˚ S21 30 S12

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) Coordinates in Ohms Frequency in GHz (VCE = 10 V, IC = 5 mA) 0.435 30.904 0.711 25.017 0.905 21.298 0.971 18.616 1.024 15.561 1.044 13.619 1.028 12.483 1.035 11.252 1.038 10.206 1.030 9.506 1.055 8.680 0.267 29.113 0.534 23.790 0.773 20.566 0.912 18.320 0.984 16.309 1.023 13.826 1.038 12.288 1.044 11.116 1.045 10.104 1.048 9.263 1.084 8.371 0.167 27.135 0.329 21.430 0.563 18.797 0.738 16.985 0.860 15.398 0.938 14.105 0.977 12.978 1.017 11.247 1.046 9.850 1.059 8.908 1.096 8.065 NE02139 VCE = 10 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) 100 .78 -39 13.96 156 .027 63 .91 -21 200 .71 -74 11.81 131 .058 62 .77 -36 400 .57 -114 7.51 107 .081 42 .54 -50 600 .50 -143 5.68 93 .093 39 .42 -56 800 .49 -164 4.16 72 .104 37 .35 -59 1000 .49 -180 3.50 81 .117 37 .30 -63 1200 .51 168 2.83 55 .129 37 .27 -66 1400 .52 160 2.59 63 .144 36 .25 -73 1600 .53 150 2.19 49 .155 38 .22 -79 1800 .53 142 2.09 42 .173 36 .21 -88 2000 .56 135 1.79 36 .181 36 .19 -98 VCE = 10 V, IC = 10 mA 100 .63 -58 20.38 145 .025 58 .81 -31 200 .56 -98 15.27 119 .039 60 .61 -45 400 .47 -139 8.90 98 .062 44 .39 -57 600 .45 -164 6.48 87 .073 50 .30 -60 800 .45 180 4.66 76 .091 49 .25 -63 1000 .47 168 3.89 69 .109 50 .21 -68 1200 .48 157 3.13 61 .126 48 .18 -71 1400 .50 152 2.86 54 .143 44 .17 -80 1600 .51 143 2.41 48 .160 46 .14 -88 1800 .52 136 2.30 42 .181 42 .14 -99 2000 .54 130 1.97 36 .191 41 .12 -113 VCE = 10 V, IC = 20 mA 100 .53 -82 25.86 136 .021 35 .72 -41 200 .47 -121 17.23 110 .033 61 .48 -51 400 .43 -157 9.44 92 .051 50 .30 -58 600 .44 -177 6.74 83 .069 57 .23 -60 800 .45 170 4.82 74 .090 55 .20 -61 1000 .46 161 4.01 67 .107 54 .16 -66 1200 .48 152 3.23 39 .127 54 .14 -71 1400 .50 147 2.95 53 .149 50 .13 -80 1600 .51 139 2.48 47 .164 50 .10 -91 1800 .52 133 2.36 41 .187 45 .10 -104 2000 .55 127 2.02 36 .197 44 .09 -121 Note: 1. Gain Calculations: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used.MSG = |S21| 2 |S12 S21| MAG = Maximum Available Gain, MSG = Maximum Stable Gain NE021 SERIES j50 j25 j10 -j10 -j25 -j50 -j100 j100 010 25 50 100 S11 120˚ 90˚ 60˚ 150˚ 180˚ -150˚ -120˚ -90˚ -60˚ -30˚ .16 .12 .08 16 204 S21.20 S12 .04 S21 30˚ 8 12 S12

OUTLINE DIMENSIONS (Units in mm) NE02100 (CHIP) *07B has emitter and base reversed.. NE021 SERIES 0.07φ BASE 0.094 0.106 0.35±0.01 0.052 0.23 0.29 0.30 0.35±0.01EMITTER

5.0 MIN (ALL LEADS)

45˚ 0.5±0.07 1.0±0.1 +0.4 -0.22.5 +0.4 -0.21.3 +0.06 -0.030.1 E B E C MARKING INTERNAL CODE YEAR INDICATOR MONTH INDICATOR PACKAGE OUTLINE 33 RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 33 LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector 0.16+0.10 -0.06 0.65+0.10 -0.15 0.4+0.10 -0.05 0 to 0.1 2.8 1.9 1.5 (ALL LEADS) 0.8 1.1 to 1.4 2.9 ± 0.2 0.95 +0.2 -0.3 +0.2 -0.1 2.4 1.9 0.95 1.0 0.8

RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 39 (SOT-23) LEAD CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter NE021 SERIES PART NUMBER QUANTITY PACKAGING NE02100 100 Waffle Pack NE02107/NE02107B 1 Hard Pack NE02133-T1B 3000 Tape & Reel NE02135 1 ESD Bag NE02139-T1 3000 Tape & Reel

ORDERING INFORMATION

(MICRO-X)

3.8 MIN

0.5±0.06 45˚ 2.55±0.2 φ2.1 0.55

1.8 MAX

+0.06 -0.040.1 ALL LEADS E C B E 2.8 +0.2 -0.3 +0.10 -0.05 (LEADS 2, 3, 4) 0.6+0.10 -0.05 0.16+0.10-0.06 5˚5˚ 0.81.1+0.2 -0.1 2 3 0 to 0.1 0.4 2.9 ± 0.2 0.95 0.85 1.9 1.5+0.2 -0.1 1.0 2.4 1.9 1.0 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. A Business Partner of NEC Compound Semiconductor Devices, Ltd. 01/31/2005