N0903L INTERFET | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • Low Noise: 0.7 nV/√Hz Typical
  • Typical Input Capacitance: 50pF
  • Typical Breakdown Voltage: -30V
  • High Input Impedance
  • Die Size: 975um X 975um X 203um
  • Bond Pads: 90um X 90um
  • Substrate Connected to Gate
  • Au Back-Side Finish

Applications

  • Low Noise Amplifier
  • Audio Amplifiers
  • Matched Pair Applications
  • Custom Part Options

Description

The InterFET N0903L Geometry is ideal for low noise high gain applications. Test Pattern Geometry Top View 903 Standard Parts

  • IF9030
  • IFN5432, IFN5433, IFN5434 Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -20 -30 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Product Summary Parameters Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage -25 -30 V IDSS Drain to Source Saturation Current 10 500 mA VGS(off) Gate to Source Cutoff Voltage -0.3 -3 V GFS Forward Transconductance 250 mS G D-S S-D G S-D D-S

www.InterFET.com N0903L Document Number: IF35519.R01 InterFET Corporation November, 2019 N0903LInterFET Product Folder Technical Support Order Now Order Now

Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage IG = -1μA, VDS = 0V -20 -30 V IGSS Gate to Source Reverse Current VGS = -15V, VDS = 0V -100 -500 pA VGS(OFF) Gate to Source Cutoff Voltage VDS = 10V, ID = 1nA -0.3 -3 V IDSS Drain to Source Saturation Current VDS = 10V, VGS = 0V 10 500 mA Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit GFS Forward Transconductance VDS = 15V, VGS = 0V, f = 1kHz 250 mS Ciss Input Capacitance VDS = 0V, VGS = -10V, f = 1MHz 50 pF Crss Reverse Transfer Capacitance VDS = 0V, VGS = -10V, f = 1MHz 18 pF en Noise Voltage VDS = 4V, ID = 5mA f = 1kHz 0.7 nV/√Hz

www.InterFET.com N0903L Document Number: IF35519.R01 InterFET Corporation November, 2019 N0903LInterFET Product Folder Technical Support Order Now Order Now Typical N0903L Characteristics Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -1.0V VGS = 0.0V VGS = -0.3V VGS = -0.6V VGS = -0.8V 100 150 200 250 300 Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -2.0V VGS = 0.0V VGS = -0.5V VGS = -1.0V VGS = -1.5V 100 150 200 250 300 350 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Drain Current, IDSS (mA) Gate to Source Voltage, VGS(OFF) (V) Typical IDSS - VGS(OFF) VGS = 0V VDS = 10V 100 150 200 250 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Transconductance, GFS (mS) Gate to Source Voltage, VGS(OFF) (V) Typical GFS - VGS(OFF) VGS = 0V VDS = 10V f = 1kHz

www.InterFET.com N0903L Document Number: IF35519.R01 InterFET Corporation November, 2019 N0903LInterFET Product Folder Technical Support Order Now Order Now Typical N0903L Characteristics (Continued) 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 On Resistance RDS(ON) (Ohms) Gate to Source Voltage, VGS(OFF) (V) Typical RDS(ON) - VGS(OFF) VGS = 0V f = 1kHz 0.2 0.4 0.6 0.8 0.01 0.1 100 Noise Voltage, en (nV/√Hz) Frequency, f (kHz) Typical Noise (nV/√Hz) VDS = 4V ID = 5mA 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 -10 Input Capacitance, CiSS (pF) Gate to Source Voltage, VGS (V) Typical CiSS - VGS VDS = 5V f = 1MHz 0.0 5.0 10.0 15.0 20.0 25.0 -10 Capacitance, CrSS (pF) Gate to Source Voltage, VGS (V) Typical CrSS - VGS VDS = 5V f = 1MHz

www.InterFET.com N0903L Document Number: IF35519.R01 InterFET Corporation November, 2019 N0903LInterFET Product Folder Technical Support Order Now Order Now N0903L Die Geometry Mechanical Raw Die Dimensions 1. All linear dimensions are in micrometers.