N0132H INTERFET | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • Low Noise: 1.5 nV/√Hz Typical
  • Typical Input Capacitance: 12pF
  • Typical Breakdown Voltage: -60V
  • High Input Impedance
  • Small Die: 518um X 518um X 203um
  • Bond Pads: 90um X 90um
  • Substrate Connected to Gate
  • Au Back-Side Finish

Applications

  • Low Noise Amplifier
  • Audio Amplifiers
  • Mid to High-Gain Applications
  • Matched Pair Applications
  • Custom Part Options

Description

The InterFET N0132H Geometry is ideal for low noise high gain applications. Similar features to the N0132S Geometry with higher BV and lower input capacitance. Test Pattern Geometry Top View G G132 Standard Parts

  • IFN112 Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -45 -60 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Product Summary Parameters Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage -45 -60 V IDSS Drain to Source Saturation Current 5 120 mA VGS(off) Gate to Source Cutoff Voltage -0.5 -7 V GFS Forward Transconductance 28 mS S-D S-D

www.InterFET.com N0132H Document Number: IF35513.R01 InterFET Corporation March, 2020 N0132HInterFET Product Folder Technical Support Order Now Order Now

Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage IG = -1μA, VDS = 0V -45 -60 V IGSS Gate to Source Reverse Current VGS = -10V, VDS = 0V -50 -100 pA VGS(OFF) Gate to Source Cutoff Voltage VDS = 10V, ID = 1nA -0.5 -7 V IDSS Drain to Source Saturation Current VDS = 10V, VGS = 0V 5 120 mA Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit GFS Forward Transconductance VDS = 10V, VGS = 0 V, f = 1kHz 28 mS Ciss Input Capacitance VDS = 10V, VGS = 0 V, f = 1MHz 12 pF Crss Reverse Transfer Capacitance VDS = 0V, VGS = -10 V, f = 1MHz 2.5 pF en Noise Voltage VDS = 4V, ID = 5mA, f = 1kHz 1.5 nV/√Hz

www.InterFET.com N0132H Document Number: IF35513.R01 InterFET Corporation March, 2020 N0132HInterFET Product Folder Technical Support Order Now Order Now Typical N0132H Characteristics 0.5 1.5 2.5 3.5 4.5 Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -0.8V VGS = 0.0V VGS = -0.2V VGS = -0.4V VGS = -0.6V Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -2.5V VGS = 0.0V VGS = -0.8V VGS = -1.5V VGS = -2.2V Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -4.5V VGS = 0.0V VGS = -1.5V VGS = -3.0V VGS = -4.2V 100 120 Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -6.0V VGS = 0.0V VGS = -2.0V VGS = -3.8V VGS = -5.5V 100 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 -7.0 Drain Current, IDSS (mA) Gate to Source Voltage, VGS(OFF) (V) Typical IDSS - VGS(OFF) VGS = 0V VDS = 10V 0.0 -0.6 -1.4 -2.2 -3.0 -3.8 -4.6 -5.4 -6.2 -7.0 Transconductance, GFS (mS) Gate to Source Voltage, VGS(OFF) (V) Typical GFS - VGS(OFF) VGS = 0V VDS = 15V f = 1kHz

www.InterFET.com N0132H Document Number: IF35513.R01 InterFET Corporation March, 2020 N0132HInterFET Product Folder Technical Support Order Now Order Now Typical N0132H Characteristics (Continued) 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 -7.0 -8.0 On Resistance RDS(ON) (Ohms) Gate to Source Voltage, VGS(OFF) (V) Typical RDS(ON) - VGS(OFF) VGS = 0V f = 1kHz 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -10 Input Capacitance, CiSS (pF) Gate to Source Voltage, VGS (V) Typical CiSS - VGS VDS = 10V f = 1MHz 0.0 1.0 2.0 3.0 4.0 5.0 -10 Capacitance, CrSS (pF) Gate to Source Voltage, VGS (V) Typical CrSS - VGS VDS = 10V f = 1MHz 0.5 1.5 2.5 0.01 0.1 100 Noise Voltage, en (nV/√Hz) Frequency, f (kHz) Typical Noise (nV/√Hz) VDS = 4V ID = 5mA

www.InterFET.com N0132H Document Number: IF35513.R01 InterFET Corporation March, 2020 N0132HInterFET Product Folder Technical Support Order Now Order Now N0132H Die Geometry Mechanical Raw Die Dimensions 1. All linear dimensions are in micrometers.