N0042Y INTERFET | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
Features
- Typical Input Capacitance: 6pF
- High Breakdown Voltage: -400V Typical
- Small Die: 746um X 746um X 203um
- Bond Pads: 95um Diameter
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- General Purpose Amplifier
- High Breakdown Voltage
- Custom Part Options
Description
The InterFET N0042Y Geometry is targeted for high voltage applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View Standard Parts
- IFN6449, IFN6450 Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -300 -400 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Product Summary Parameters Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage -300 -400 V IDSS Drain to Source Saturation Current 2 10 mA VGS(off) Gate to Source Cutoff Voltage -2 -12 V GFS Forward Transconductance 0.8 mS S S D
www.InterFET.com N0042Y Document Number: IF35510.R01 InterFET Corporation November, 2019 N0042YInterFET Product Folder Technical Support Order Now Order Now
Electrical Characteristics
Static Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage IG = 1μA, VDS = 0V -300 -400 V IGSS Gate to Source Reverse Current VGS = -150V, VDS = 0V -1 -10 nA VGS(OFF) Gate to Source Cutoff Voltage VDS = 30V, ID = 1nA -2 -12 V IDSS Drain to Source Saturation Current VDS = 30V, VGS = 0V 2 10 mA Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit GFS Forward Transconductance VDS = 30V, VGS = 0V, f = 1kHz 0.8 mS Ciss Input Capacitance VDS = 30V, VGS = 0V, f = 1MHz 6 10 pF Crss Reverse Transfer Capacitance VDS = 30V, VGS = 0V, f = 1MHz 2 5 pF en Noise Voltage VDS = 30V, ID = 2mA, f = 1kHz 7.5 nV/√Hz
www.InterFET.com N0042Y Document Number: IF35510.R01 InterFET Corporation November, 2019 N0042YInterFET Product Folder Technical Support Order Now Order Now Typical N0042Y Characteristics 0.5 1.5 2.5 Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -4.0V VGS = 0.0V VGS = -1.2V VGS = -2.4V VGS = -3.6V 0.5 1.5 2.5 3.5 4.5 Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -8.0V VGS = 0.0V VGS = -2.4V VGS = -4.8V VGS = -7.2V 0.01 0.1 100 Noise Voltage, en (nV/√Hz) Frequency, f (kHz) Typical Noise (nV/√Hz) ID = 2mA VDS = 10V 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -10 Input Capacitance, CiSS (pF) Gate to Source Voltage, VGS (V) Typical CiSS - VGS VDS = 50V f = 1MHz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -10 Capacitance, CrSS (pF) Gate to Source Voltage, VGS (V) Typical CrSS - VGS VDS = 50V f = 1MHz 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 Drain Current, IDSS (mA) Gate to Source Voltage, VGS(OFF) (V) Typical IDSS - VGS(OFF) VGS = 0V VDS = 30V
www.InterFET.com N0042Y Document Number: IF35510.R01 InterFET Corporation November, 2019 N0042YInterFET Product Folder Technical Support Order Now Order Now N0042Y Die Geometry Mechanical Raw Die Dimensions 1. All linear dimensions are in micrometers.