N0014EU INTERFET | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • Low Input Capacitance: 2.3pF Typical
  • Low Gate Leakage: 1.5pA Typical
  • High Breakdown Voltage: -30V Typical
  • High Input Impedance
  • Die Size: 482um X 482um X 203um
  • Bond Pads: 90um Diameter
  • Substrate Connected to Gate
  • Au Back Side Finish
  • Flip Chip Bumped Package Option

Applications

  • Small Signal Amplifiers
  • Audio Amplifiers
  • Low Noise High Gain Amplifier
  • RF Amplifiers
  • Custom Part Options

Description

The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -15 -30 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Product Summary Parameters Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage -15 -30 V IDSS Drain to Source Saturation Current 0.5 10 20 mA VGS(off) Gate to Source Cutoff Voltage -0.5 -7 V GFS Forward Transconductance 4.0 mS S-DS-D DNC 14EU Connection Configuration Source-Drain Source-Drain Diode Gate Note: Gate connected to backside metal

www.InterFET.com N0014EU Document Number: IF35524.R00 InterFET Corporation July, 2020 N0014EUInterFET Product Folder Technical Support Order Now Order Now

Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage IG = -1μA, VDS = 0V -15 -30 V IGSS Gate to Source Reverse Current VGS = -10V, VDS = 0V -1.5 -100 pA VGS(OFF) Gate to Source Cutoff Voltage VDS = 10V, ID = 1nA -0.5 -7 V IDSS Drain to Source Saturation Current VDS = 10V, VGS = 0V 0.5 10 20 mA V(BR)Gdiode Gate to Diode Breakdown Voltage + IG = 10μA, VDS = 0V 0.4 0.8 V V(BR)Gdiode Gate to Diode Breakdown Voltage - IG = -10μA, VDS = 0V -0.4 -0.8 V Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit GFS Forward Transconductance VDS = 10V, VGS = 0V, f = 1kHz 4.0 mS Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 2.3 pF Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1MHz 0.5 pF en Noise Voltage VDS = 10V, ID = 0.5mA f = 1kHz 3.5 nV/√Hz

www.InterFET.com N0014EU Document Number: IF35524.R00 InterFET Corporation July, 2020 N0014EUInterFET Product Folder Technical Support Order Now Order Now Typical N0014EU Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -0.8V VGS = 0.0V VGS = -0.2V VGS = -0.4V VGS = -0.6V Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -2.5V VGS = 0.0V VGS = -0.8V VGS = -1.5V VGS = -2.2V Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -4.5V VGS = 0.0V VGS = -1.5V VGS = -3.0V VGS = -4.2V Drain Current, ID (mA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -6.0V VGS = 0.0V VGS = -2.0V VGS = -3.8V VGS = -5.5V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Drain Current, IDSS (mA) Gate to Source Voltage, VGS(OFF) (V) Typical IDSS - VGS(OFF) VGS = 0V VDS = 10V 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 -7.0 Drain Current, IDSS (mA) Gate to Source Voltage, VGS(OFF) (V) Typical IDSS - VGS(OFF) VGS = 0V VDS = 10V

www.InterFET.com N0014EU Document Number: IF35524.R00 InterFET Corporation July, 2020 N0014EUInterFET Product Folder Technical Support Order Now Order Now Typical N0014EU Characteristics (Continued) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -10 Input Capacitance, CiSS (pF) Gate to Source Voltage, VGS (V) Typical CiSS - VGS VDS = 10V f = 1MHz 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -10 Capacitance, CrSS (pF) Gate to Source Voltage, VGS (V) Typical CrSS - VGS 200 400 600 800 1,000 1,200 1,400 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 -7.0 On Resistance RDS(ON) (Ohms) Gate to Source Voltage, VGS(OFF) (V) Typical RDS(ON) - VGS(OFF) VGS = 0V f = 1kHz 0.01 0.1 100 Noise Voltage, en (nV/√Hz) Frequency, f (kHz) Typical Noise (nV/√Hz) VDS = 4V ID = 0.5mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Transconductance, GFS (mS) Gate to Source Voltage, VGS(OFF) (V) Typical GFS - VGS(OFF) VGS = 0V VDS = 15V f = 1kHz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 -0.6 -1.4 -2.2 -3.0 -3.8 -4.6 -5.4 -6.2 -7.0 Transconductance, GFS (mS) Gate to Source Voltage, VGS(OFF) (V) Typical GFS - VGS(OFF) VGS = 0V VDS = 15V f = 1kHz

www.InterFET.com N0014EU Document Number: IF35524.R00 InterFET Corporation July, 2020 N0014EUInterFET Product Folder Technical Support Order Now Order Now N0014EU Die Geometry Mechanical Raw Die Dimensions 1. All linear dimensions are in micrometers. 2. Die package designed for flip chip bumping or wire bonding interconnect.