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D ATA S HEET MSM13Q/14Q000 0.35 µm Sea of Gates Arrays November 1999 OKI ASIC PRODUCTS

n n Oki Semiconductor

0.35 µm Sea of Gates Arrays

DESCRIPTION

Oki’s 0.3 5 µm ASIC products deliver ultra-high performance and high density at low power dissipation. The MSM13Q0000/14Q0000 series devices (referred to as “MSM13Q/14Q”) are implemented with the industry-standard Cell-Based Array (CBA) architecture in a Sea-of-Gates (SOG) structure. Built in a 0.35 µm drawn CMOS technology (with an L-Effective of 0.27 µm), these SOG devices are available in three layers (MSM13Q) and four layers (MSM14Q) of metal. The semiconductor process is adapted from Oki’s production-proven 64-Mbit DRAM manufacturing process. The MSM13Q/14Q Series contains 6 arrays each, offering over 1 million raw gates and 352 I/O pads. Up to 66% and 90% of the raw gates can be used for the 3-layer and 4-layer arrays, respectively. Oki’s 0.35 µm family is optimized for 3-V core operation with optimized 3-V I/O buffers and 5-V tolerant 3-V buff- ers. These SOG products are designed to fit the most popular plastic quad flat packs (QFPs), thin QFPs (TQFPs) , and plastic ball grid array (PBGA) packages. The MSM13Q/14Q Series uses the popular CBA architecture from Silicon Architects of Synopsys which mixes two types of cells (8-transistor compute cells and 4-transistor drive cells) on the same die to deliver high gate density and high drives. The CBA is supported by a rich macro library, optimized for synthesis. Memory blocks are efficiently created by Oki’s memory compilers to generate single- and dual-port RAM’s in high-density and low-power configurations with synchronous RAM options. As such, the MSM13Q/14Q series is well suited to memory-intensive designs with high production vol- umes approaching the real estate and cost savings of standard cells. At the same time, its SOG architec- ture allows rapid prototyping turnaround times. Thus, Oki’s MSM13Q/14Q family offers the best of two worlds: quick prototyping of a gate array and low production cost of a standard cell. Oki’s 0.35 µm ASIC products are supported by leading-edge CAD tools including a synthesis-linked floorplanner, motive static timing analyzer, and H-clock tree methodology. They are further supported by specialized macrocells including phase-locked loop (PLL), pseudo-emitter coupled logic (PECL), peripheral component interconnect (PCI), universal synchronous receiver/transmitter (UART) cells, and ARM7TDMI RISC cores.

FEATURES

  • 0.35 µm drawn 3- and 4-layer metal CMOS
  • Optimized 3.3-V core
  • Optimized 3-V I/O and 3-V I/O that is 5-V tolerant
  • CBA SOG architecture
  • Over 1.0M raw gates and 352 pads
  • User-configurable I/O with V SS, VDD, TTL, 3- state, and 1- to 24-mA options
  • Slew-rate-controlled outputs for low-radiated noise
  • H-clock tree cells which reduce the maximum skew for clock signals
  • User-configurable single and dual-port; synchronous or asynchronous memories
  • Specialized macrocells including PLL, PECL, PCI, UART, and ARM7TDMI
  • Floorplanning for front-end simulation, back- end layout controls, and link to synthesis
  • Joint Test Action Group (JTAG) boundary scan and scan-path ATPG
  • Support for popular CAE systems, including Cadence, IKOS, Mentor Graphics, Synopsys, Viewlogic, and Zycad

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The primary components of a 0.35 µm MSM13Q/14Q circuit include:

  • I/O base cells
  • Configurable I/O pads for V DD , V SS , or I/O (optimized 3-V I/O and 3-V I/O that is 5-V tolerant) DD and V SS pads dedicated to wafer probing
  • Separate power bus for output buffers
  • Separate power bus for internal core logic and input buffers
  • Core base modules containing three compute cells for each drive cell
  • Isolated gate structure for reduced input capacitance and increased routing flexibility Each array has 24 dedicated corner pads for power and ground use during wafer probing, with 4 pads per corner. The arrays also have separate power rings for the internal core functions (V DDC and V SSC and output drive transistors (V DDO and V SSO The array architecture uses optimally sized transistors to efficiently implement logic and memory in a metal programmable technology. CBA uses two types of cells: compute cells and drive cells. The com- pute cell employs four PMOS and four NMOS trasnsistors whose sizes are optimized for logic and mem- ory implementations as shown in Figure 1 . The quantity and size of the transistors in a compute cell are carefully selected to maximize the efficiency of most commonly used functions in VLSI design. The drive cell consists of two large PMOS pull-up transistors and two large pull-down transistors. The compute and drive cells are tiled to create a channelless core array, with three comput cells for each drive cell as shown in Figure 2 . The 3:1 ratio of compute to drive cells was selected for optimal implementation of emerging applications. Macrocells are created using either compute cells, drive cells, or combinations of compute and drive cells. MSM13Q/14Q FAMILY LISTING MSM13Q/14Q Series PAD No. Raw Gate (Gates) Usable Gate M13Q(3LM) Usable Gate M14Q(4LM) Raw Gate Row Column 0150 144 157,192 105,319 143,045 196 802 0230 176 242,400 152,712 208,464 240 1,010 0340 208 346,176 204,244 276,941 288 1,202 0530 256 536,400 289,656 391,572 360 1,490 0840 320 847,048 415,054 567,522 452 1,874 1020 352 1,033,000 475,180 650,790 500 2,066

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ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (V SS = 0 V, T j = 25°C) [1] 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions in the other specifications of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Conditions Rated Value Unit Power supply voltage V DD -0.3 to +4.6 V Input voltage Normal buffers V I -0.3 to V DD +0.3 V 5-V tolerant V I -0.3 to 6.0 Output voltage Normal buffers V O -0.3 to V DD +0.3 V 5-V tolerant V O -0.3 to 6.0 Input current Normal buffers I I -10 to +10 mA 5-V tolerant I I -6 to +6 Output current per I/O Normal buffers I O I O = 1, 2, 4, 6, 8, 12, 24 mA -24 to +24 mA 5-V tolerant I O I O = 2, 4, 6, 8, 12 mA -8 to +8 Storage temperature T stg – -65 to +150 °C Recommended Operating Conditions (V SS = 0 V) Parameter Symbol Rated Value Unit Power supply voltage V DD Junction temperature T j -40 to +85 °C

n MSM13Q0000/14Q0000 n 5Oki Semiconductor DC Characteristics (V DD = 3.0 to 3.6 V, V SS = 0 V, T j = -40°C to +85°C) Parameter Symbol Conditions Rated Value [1] 1. JEDEC Compatible; JESD8-1A LVTTL. UnitMin. Typ [2] 2. Typical condition is V DD = 3.3 V and T j = 25 o C on a typical process. Max. High-level input voltage Normal buffer V IH 2.0 – V DD + 0.3 V 5-V tolerant V IH 2.0 – 5.5 Low-level input voltage Normal buffer V IL TTL input -0.3 – 0.8 5-V tolerant V IL TTL input -0.3 – 0.8 TTL- level Schmitt trigger input threshold voltage Normal buffer V TTL input – 1.5 2.0 V 0.7 1.0 – D V t V - V 0.4 0.5 – 5-V tolerant V TTL 5-V tolerant input – 1.5 2.0 V 0.7 1.0 – D V t V - V 0.4 0.5 – High-level output voltage Normal buffer V OH I OH = -100 µA V DD - 0.2 – – I OH 5-V tolerant V OH I OH = -100 µA V DD - 0.2 – – I OH Low-level output voltage Normal buffer V OL I OL = 100 µA – – 0.2 I OL 5-V tolerant V OL I OL = 100 µA – – 0.2 I OL High-level input current Normal buffer I IH V IH = V DD – 0.1 10 µA V IH = V DD (50-k W pull-down) 10 66 200 5-V tolerant I IH V IH = V DD – 0.1 10 V IH = V DD (50-k W pull-down) 10 66 200 Low-level input current Normal buffer I IL V IL = V SS -10 -0.1 - V IL = V SS (50-k W pull-up) -200 -66 -10 V IL = V SS (3-k W pull-up) -3.3 -1.1 -0.3 mA 5-V tolerant I IL V IL = V SS -10 -0.1 µA 3-state output leakage current Normal buffer I OZH V OH = V DD – 0.1 10 µAV OH = V DD (50-k W pull-down) 10 -66 200 I OZL V OL = V SS -10 -0.1 – V OL = V SS (50-k W pull-up) -200 -66 -10 V OL = V SS (3-k W pull-up) -3.3 -1.1 -0.3 mA 5-V tolerant I OZH VOH = VDD – 0.1 10 µAVOH = VDD (50-kW pull-down) 10 66 200 IOZL VOL = VSS -10 -0.1 – Stand-by current [3] 3. RAM/ROM should be in powerdown mode. IDDQ Output open, VIH = VDD, VIL = VSS Design Dependent µA

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AC Characteristics (VDD = 3.3 V, VSS = 0 V, Tj = 25°C) Parameter Driving Type Conditions [1] [2] 1. Input transition time in 0.2 ns / 3.3 V. 2. Typical condition is VDD = 3.3 V and Tj = 25oC. Rated Value [3] 3. Rated value is calculated as an average of the L-H and H-L delay times of each macro type on a typical process. Unit Internal gate propagation delay Inverter 1X F/O = 2, L = 0 mm VDD = 3.3 V 0.082 ns 2X 0.068 4X 0.062 2-input NAND 1X 0.14 2X 0.13 2-input NOR 1X 0.16 2X 0.14 Inverter 1X F/O = 2, L = 1 mm VDD = 3.3 V 0.19 2X 0.13 4X 0.097 2-input NAND 1X 0.28 2X 0.20 2-input NOR 1X 0.34 2X 0.24 Toggle frequency F/O= 1, L = 0 mm 1040 MHz Input buffer propagation delay TTL level normal input buffer F/O = 2,L = 1 mm 0.35 ns TTL level 5-V tolerant buffer 0.64 Output buffer propagation delay Push-pull Normal output buffer 4 mA CL = 20pF 2.15 8 mA CL= 50 pF 2.25 12 mA CL = 100 pF 2.82 3-state 5-V tolerant buffer 4 mA CL = 20 pF 2.41 Output buffer transition times [4] 4. Output rising and falling times are both specified over a 10 to 90% range. Push-pull Normal output buffer 12 mA CL = 100 pF 4.68 (r) 3.48 (f) 3-state 5-V tolerant buffer 4 mA CL = 20 pF 3.53 (r) 3.24 (f)

figure illustrates the main classes of macrocells and macrofunctions available. Figure 3. Oki Macrocell and Macrofunction Library

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  • True RC back annotation of the clock network
  • Automatic fan-out balancing
  • Dynamic sub-trunk allocation
  • Single clock tree driver logic symbol
  • Automatic branch length minimization
  • Dynamic driver placement
  • Allows multiple clock trees Clock

Figure 4. H-Clock-Tree Structure

OKI ADVANCED DESIGN CENTER CAD TOOLS Oki’s advanced design center CAD tools include support for the following:

  • Floorplanning for front-end simulation, back-end layout control, and link to synthesis
  • Clock tree structures improve first-time silicon success by eliminating clock skew problems
  • JTAG Boundary scan support
  • Power calculation which predicts circuit power under simulation conditions to accurately model package requirements (in development) Table 1: CAD Design Tools Vendor Platform Operating System [1] 1. Contact Oki Application Engineering for current software versions. Vendor Software/Revision [1] Description Cadence HP9000, 7xx IBM RS6000 Sun® [2] 2. Sun or Sun-compatible. HP-UX AIX SunOS, Solaris Composer™ Verilog™ Veritime™ Verifault™ Synergy™ Concept™ [3] Leapfrog™ 3. Sun and HP platform only. Design capture Simulation Timing analysis Fault grading Design synthesis Design capture VHDL simulation IKOS HP9000, 7xx, Sun [2] HP-UX, SunOS, Solaris NSIM Gemini/Voyager Simulation Mentor Graphics™ HP9000, 7xx Sun [2] HP-UX SunOS, Solaris IDEA™ QuickVHDL QuickSim II™ QuickPath™ QuickFault™ QuickGrade™ AutoLogic™ DFT Advisor Design capture VHDL simulation Logic simulation Timing analysis Fault grading Fault grading Design synthesis Test synthesis Synopsys (Interface to Mentor Graphics, VIEWLogic) IBM RS6000 HP9000, 7xx Sun [2] AIX HP-UX SunOS, Solaris Design Compiler™ HDL/VHDL Compiler™ Test Compiler™ VSS™ Compilation Design synthesis Test synthesis VHDL simulation Model Technology, Inc. (MTI) HP9000, 7xx Sun [2] PC HP-UX SunOS, Solaris. Win95/NT™ V-System VHDL Simulation VIEWLogic PC Sun [2] Windows™, Windows NT™ SunOS, Solaris Workview Office™ Powerview™ Vantage Optium Motive ViewSim™ with VSO Design capture Simulation VHDL simulation Timing analysis Design synthesis Simulation

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between external design houses and Oki ASIC Application Engineering. [1] Oki’s Circuit Data Check (CDC) program verifies logic design rules. [2] Oki’s Link to Synthesis Floorplanning (LSF) toolset transfers post-floorplanning timing for resynthesis. [3] Oki’s Test Data Check (TDC) program verifies test vector rules. [4] Oki’s Test Pattern Language (TPL). [5] Alternate Customer-Oki design interfaces available in addition to standard level 2. [6] Standard design process includes fault simulation. Figure 5. Oki’s Design Process

  • Increases fault coverage ‡95%
  • Uses Synopsys Test Compiler
  • Inserts scan structures automatically
  • Connects scan chains
  • Traces and reports scan chains
  • Checks for rule violations
  • Generates complete fault reports
  • Allows multiple scan chains
  • Supports vector compaction ATPG methodology is described in detail in Oki’s 0.35 µm Scan Path Application Note. Floorplanning Design Flow Oki offers three floorplanning tools for high-density ASIC design. The two main purposes for Oki’s floor- planning tool are to:
  • Ensure conformance of critical circuit performance specifications
  • Shorten overall design turnaround time (TAT) The supported floorplanners are: Cadence DP3, Gambit GFP, and Oki’s internal floorplanner. In a traditional design approach with synthesis tools, timing violations after prelayout simulation are fixed by manual editing of the netlist. This process is difficult and time consuming. Also, there is no physical cluster information provided in the synthesis tool, and so it is difficult to synthesize logic using predicted interconnection delay due to wire length. Therefore, synthesis tools may create over-optimized results. To minimize these problems, Synopsys proposed a methodology called Links to Layout (LTL). Based on this methodology, Oki developed an interface between Oki’s floorplanners and the Synopsys environ- ment, called Link Synopsys to Floorplanner (LSF). Because not all Synopsys users have access to the Syn- opsys Floorplan Management tool, Oki developed the LSF system to support both users who can access Scan Data In Scan Select D C SD SS Q QN D C SD SS A B Combinational Logic FD1AS FD1AS Scan Data OutQ QN

Figure 6. Full Scan Path Configuration

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Floorplanner: Standalone Operation and Links to Synopsys. Figure 7. LSF System Design Flow

IEEE JTAG Boundary Scan Support Boundary scan offers efficient board-level and chip-level testing capabilities. Benefits resulting from incorporating boundary-scan logic into a design include:

  • Improved chip-level and board-level testing and failure diagnostic capabilities
  • Support for testing of components with limited probe access
  • Easy-to-maintain testability and system self-test capability with on-board software
  • Capability to fully isolate and test components on the scan path
  • Built-in test logic that can be activated and monitored
  • An optional Boundary Scan Identification (ID) Register Oki’s boundary scan methodology meets the JTAG Boundary Scan standard, IEEE 1149.1-1990. Either the customer or Oki can perform boundary-scan insertion. More information is available in Oki’s JTAG Boundary Scan Application Note. (Contact the Oki Application Engineering Department for interface options.)

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TQFP & LQFP Package Menu Base Array MSM... I/O Pads [1] 1. I/O Pads can be used for input, output, bi-directional, power, or ground. l = Available now; m = In development TQFP LQFP 64 80 100 144 176 208 13Q/14Q0150 144 llll 13Q/14Q0230 176 lllll 13Q/14Q0340 208 llllll 13Q/14Q0530 256 lllml 13Q/14Q0840 320 lmll 13Q/14Q1020 352 mll Body Size (mm) 10 x 10 12 x 12 14 x 14 20 x 20 24 x 24 28 x 28 Base Array MSM... I/O Pads [1] 1. I/O Pads can be used for input, output, bi-directional, power, or ground. l = Available now; m = In development PQFP (42 Alloy) PQFP (Cu-Alloy) 128 160 208 240 13Q/14Q0150 144 m 13Q/14Q0230 176 mm 13Q/14Q0340 208 ll 13Q/14Q0530 256 lll 13Q/14Q0840 320 lllm 13Q/14Q1020 352 mllm Body Size (mm) 28 x 28 28 x 28 28 x 28 32 x 32 Lead Pitch (mm) 0.80 0.65 0.50 0.50

MSM... I/O Pads [1] 1. I/O Pads can be used for input, output, bi-directional, power, or ground. l = Available now; m = In development 256 352 13Q/14Q0150 144 13Q/14Q0230 176 l 13Q/14Q0340 208 l 13Q/14Q0530 256 l 13Q/14Q0840 320 ll 13Q/14Q1020 352 ll Body Size (mm) 27 x 27 35 x 35 Ball Pitch (mm) 1.27 1.27

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Notes:

The information contained herein can change without notice owing to product and/or technical improvements. Please make sure before using the product that the information you are referring to is up-to-date. The outline of action and examples of application circuits described herein have been chosen as an explanation of the standard action and performance of the product. When you actually plan to use the product, please ensure that the outside conditions are reflected in the actual circuit and assembly designs. Oki assumes no responsibility or liability whatsoever for any failure or unusual or unexpected operation resulting from misuse, neglect, improper installation, repair, alteration or accident, improper handling, or unusual physical or electrical stress including, but not limited to, exposure to parameters outside the specified maximum ratings or operation outside the specified operating range. Neither indemnity against nor license of a third party's industrial and intellectual property right,etc.is granted by us in connection with the use of product and/or the information and drawings contained herein. No responsibility is assumed by us for any infringement of a third party's right which may result from the use thereof. When designing your product, please use our product below the specified maximum ratings and within the specified operating ranges, including but not limited to operating voltage, power dissipation, and operating temperature. The products listed in this document are intended for use in general electronics equipment for commercial applications (e.g.,office automation, communication equipment, measurement equipment, consumer electronics, etc.).These products are not authorized for use in any system or application that requires special or enhanced quality and reliability characteristics nor in any system or application where the failure of such system or application may result in the loss or damage of property or death or injury to humans. Such applications include, but are not limited to: traffic control, automotive, safety, aerospace, nuclear power control, and medical, including life support and maintenance. Certain parts in this document may need governmental approval before they can be exported to certain countries. The purchaser assumes the responsibility of determining the legality of export of these parts and will take appropriate and necessary steps, at their own expense, for export to another country. Copyright 1999 Oki Semiconductor Oki Semiconductor reserves the right to make changes in specifications at anytime and without notice. This information furnished by Oki Semiconductor in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Oki Semiconductor for its use; nor for any infringements of patents or other rights of third parties resulting from its use. No license is granted under any patents or patent rights of Oki.

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