MSD601-RT1

MSD601 ETL | Alldatasheet

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N6–1/1 MSD601–RT1 MSD601–ST1 NPN General Purpose Amplifier Transistors Surface Mount CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS (T A = 25°C) Rating Symbol Value Unit Collector-Base Voltage V (BR)CBO 60 Vdc Collector-Emitter Voltage V (BR)CEO 50 Vdc Emitter-Base Voltage V (BR)EBO 7.0 Vdc Collector Current–Continuous I C 100 mAdc Collector Current–Peak I C(P) 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation P D 200 mW Junction Temperature T J 150 °C Storage Temperature T stg –55 ~ +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, I B = 0) V (BR)CEO 50 — Vdc Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0) V (BR)CBO 60 — Vdc Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0) V (BR)EBO 7.0 — Vdc Collector-Base Cutoff Current (V CB = 45 Vdc, I E = 0) I CBO — 0.1 µAdc Collector-Emitter Cutoff Current (V CE = 10 Vdc, I B = 0) I CEO — 100 nAdc DC Current Gain (1) — (V CE = 10 Vdc, I C = 2.0 mAdc) MSD601-RT1 h FE1 210 340 MSD601-ST1 290 460 (V CE = 2.0 Vdc, I C = 100 mAdc) h FE2 90 — Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) V CE(sat) — 0.5 Vdc 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. DEVICE MARKING The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. YS X Marking Symbol MSD601–RT1 MSD601–ST1 YR X COLLECTOR 2 1 BASE EMITTER