GBAS16 ETL | Alldatasheet
Document overview
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Technical content
GBAS16 Page: 1/2 ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C TPU.34)QBDLBHF* GG BB AASS 11 66 SS UU RR FF AA CC EE MM OO UU NN TT ,, SS WW II TT CC HH II NN GG DD II OO DD EE V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A
Description
The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings at T A = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 : Storage Temperature Tstg -65 ~ +150 : Reverse Voltage VR 85 V Repetitive Reverse Voltage VRRM 85 V Forward Current IO 250 mA Repetitive Forward Current IFM 500 mA Forward Surge Current (1ms) IFSM 1000 mA Total Power Dissipation(Note1) PD 350 mW Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics
(at TA = 25: unless otherwise noted) Characteristic Symbol Min. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR) 85 - V IR=100uA VF(1) - 715 mV IF=1mA VF(2) - 855 mV IF=10mA VF(3) - 1000 mV IF=50mA Forward Voltage VF(4) - 1250 mV IF=150mA Reverse Current IR - 1 uA VR=85V Total Capacitance CT 2 pF VR=0, f=1MHz Reverse Recovery Time Trr - 6 nS IF=IR=10mA, RL=100 measured at IR=1mA
GBAS16 Page: 2/2 ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165