BAP65-02 ETL | Alldatasheet

Document overview

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Technical content

S27–1/2

FEATURES

  • High voltage, current controlled
  • RF resistor for RF switches
  • Low diode capacitance
  • Low diode forward resistance (low loss)
  • Very low series inductance.

APPLICATIONS

  • RF attenuators and switches
  • Bandswitch for TV tuners
  • Series diode for mobile communication transmit/receive switch.

DESCRIPTION

Planar PIN diode in a SOD523 ultra small SMD plastic package. Silicon PIN diode SOD523 SC-79 BAP65 – 02 ANODE CATHODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage – 30 V II F continuous forward current – 100 mA P tot total power dissipation T s < 90°C – 715 mW T stg storage temperature -65 +150 °C T j junction temperature -65 +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V F forward voltage I F =50 mA 0.9 1.1 V I R reverse current V R =20 V – 20 nA C d diode capacitance V R = 0; f = 1 MHz 0.65 – pF V R = 1 V; f = 1 MHz 0.55 0.9 pF V R = 3 V; f = 1 MHz 0.5 0.8 pF V R = 20 V; f = 1 MHz 0.375 – pF r D diode forward resistance I F = 1 mA; f = 100 MHz; 1 – Ω I F = 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω I F = 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω I F = 100 mA; f = 100 MHz; 0.35 – Ω |s 21| 2 isolation V R = 0; f = 900 MHz 10 – dB V R = 0; f = 1800 MHz 5.8 – dB V R = 0; f = 2450 MHz 4.4 – dB |s 21| 2 insertion loss I F = 1 mA; f = 900 MHz 0.11 – dB I F = 1 mA; f = 1800 MHz 0.13 – dB I F = 1 mA; f = 2450 MHz 0.16 – dB |s 21| 2 insertion loss I F = 5 mA; f = 900 MHz 0.08 – dB I F = 5 mA; f = 1800 MHz 0.11 – dB I F = 5 mA; f = 2450 MHz 0.13 – dB |s 21| 2 insertion loss I F = 10 mA; f = 900 MHz 0.07 – dB I F = 10 mA; f = 1800 MHz 0.1 – dB I F = 10 mA; f = 2450 MHz 0.13 – dB |s 21| 2 insertion loss I F = 100 mA; f = 900 MHz 0.07 – dB I F = 100 mA; f = 1800 MHz 0.1 – dB I F = 100 mA; f = 2450 MHz 0.128 – dB

S27–2/2 BAP65-02 10 -1 04 8 1 2 1 6 2 0I F (mA ) r D ( Ω ) 1000 800 600 400 200 010 -1 1 10 10 2 V R ( V ) C d (pF) f = 100 MHz; T j =25°C f = 1 MHz; T j =25°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue) SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT τ L charge carrier life time when switched from I F =10 mA to 0.17 – µ s I R = 6 mA; R L = 100 Ω; measured at I R =3 mA L S series inductance I F =10 mA ; f =100MHz 0.6 – nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL P ARAMETER V ALUE UNIT R th j-s thermal resistance from junction to soldering-point 85 K/W - 10 - 20 - 30 - 40 f (GHz ) -0.1 -0.2 -0.3 -0.4 -0.5 01 23 f (GHz ) |s 21| 2(dB) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. |s 21| 2(dB) Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25°C. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25°C. (1) I F =0.5 mA. (2) I F =1 mA. (3) I F = 5 mA. (4) I F = 10 mA. (5) I F = 100mA. 01 23