MMDL770 ETL | Alldatasheet
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Technical content
S4–1/3 Schottky Barrier Diode PLASTIC SOD– 323 CASE 477 MMDL770T1 MAXIMUM RATINGS Symbol Rating V alue Unit V R Reverse Voltage 70 Vdc THERMAL CHARACTERISTICS Symbol Characteristic Max Unit P D Total Device Dissipation FR–5 Board,* 200 mW T A = 25°C Derate above 25°C 1.57 mW/°C R θJA Thermal Resistance Junction to Ambient 635 °C/W T J , T stg Junction and Storage –55 to+150 °CTemperature Range *FR–5 Minimum Pad
ORDERING INFORMATION
MMDL770T1 SOD–323 3000 / T ape & Reel 1.0 pF SCHOTTKY BARRIER DIODE ANODE CATHODE Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance — 1.0 pF @ 20 V Low Reverse Leakage — 200 nA (max) High Reverse Voltage — 70 Volts (min) Available in 8 mm Tape and Reel Device Marking: 5H ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V (BR)R 70 — — Volts(I R = 10 µA) Diode Capacitance C T — 0.5 1.0 pF(V R = 20 Volts, f = 1.0 MHz) Reverse Leakage I R — 9.0 200 nAdc(V R = 35 V) Forward Voltage (I F = 1.0 mAdc) V F — 0.7 1.0 Vdc (I F = 10 mA)
S4–3/3 MMDL770T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A D B1 2 J NOTE 3 H E C 0.63 mm 0.025’’ 1.60 mm 0.063’’ 2.85 mm 0.112’’ 0.83 mm 0.033’’ mm inches SOD–323 Soldering Footprint NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. DIM MILLIMETERS INCHES MIN MAX MIN MAX A 1.60 1.80 0.063 0.071 B 1.15 1.35 0.045 0.053 C 0.80 1.00 0.031 0.039 D 0.25 0.40 0.010 0.016 E 0.15 REF 0.006 REF H 0.00 0.10 0.000 0.004 J 0.089 0.177 0.0035 0.0070 K 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE