MSC2323267D-60DS4

MSC23232D-XXBS4 OKI | Alldatasheet

Document overview

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Technical content

2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO This version: Mar. 3. 1999

DESCRIPTION

The MSC2323267D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with four decoupling capacitors on a 72-pin glass epoxy single-inline package. This module supports any application where high density and large capacity of storage memory are required.

FEATURES

• 2,097,152-word x 32-bit organization
• 72-pin Single Inline Memory Module MSC2323267D-xxBS4 : Gold tab MSC2323267D-xxDS4 : Solder tab
• Single +5V supply ± 10% tolerance
• Input : TTL compatible
• Output : TTL compatible, 3-state
• Refresh : 2048cycles/32ms
• /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
• Fast page mode with EDO capability PRODUCT FAMILY Access Time (Max.) Power Dissipation Family tRAC tAA tCAC Cycle Time (Min.) Operating (Max.) Standby (Max.) MSC2323267D-60BS4/DS4 60ns 30ns 15ns 104ns 2420mW MSC2323267D-70BS4/DS4 70ns 35ns 20ns 124ns 2200mW 22mW

R1.57 6.35 1.04Typ. 1.27±0.1 95.25 2.03Typ. 6.35Typ. Typ. 6.35 Typ. 10.16 ( 3.18 25.4±0.2 101.19Typ. 107.95±0.2*1 3.38Typ. 4.0Min. 5.28Max. +0.1 -0.08 1.27 (Unit : mm) MSC2323267D-xxBS4/DS4 The common size difference of the board width 12.5mm of its height is specified as ±0.2. The value above 12.5mm is specified as ±0.5.

Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name VSS A10 NC DQ11 DQ0 DQ4 NC DQ27 DQ16 DQ20 VSS DQ12 DQ1 DQ5 /CAS0 DQ28 DQ17 DQ21 /CAS2 VCC DQ2 DQ6 /CAS3 DQ29 DQ18 DQ22 /CAS1 DQ13 DQ3 DQ7 /RAS0 DQ30 DQ19 DQ23 NC DQ14 VCC NC DQ31 NC NC /WE DQ15 VCC NC NC DQ8 PD1 DQ24 PD2 NC DQ9 PD3 /RAS2 DQ25 PD4 NC DQ10 NC NC DQ26 VSS Presence Detect Pins Pin No. Pin Name MSC2323267D -60BS4/DS4 MSC2323267D -70BS4/DS4 PD1 NC NC PD2 NC NC PD3 NC VSS PD4 NC NC

/WE /CAS1 /CAS0 A0-A9 /CAS3 /CAS2 DQ0 A0-A9 DQ1 DQ3 DQ2 DQ4 DQ5 /RAS /CAS DQ6 DQ1 DQ2 DQ3 VCC VSS C1-C4 DQ8 VCC /WE /OE VSS DQ4 DQ5 DQ6 DQ7 DQ7 /RAS0 /RAS2 A10R DQ8 A0-A9 DQ1 DQ3 DQ2 DQ4 DQ5 /RAS /CAS DQ6 DQ9 DQ10 DQ11 DQ8 VCC /WE /OE VSS DQ12 DQ13 DQ14 DQ15 DQ7 A10R DQ16 A0-A9 DQ1 DQ3 DQ2 DQ4 DQ5 /RAS /CAS DQ6 DQ17 DQ18 DQ19 DQ8 VCC /WE /OE VSS DQ20 DQ21 DQ22 DQ23 DQ7 A10R DQ24 A0-A9 DQ1 DQ3 DQ2 DQ4 DQ5 /RAS /CAS DQ6 DQ25 DQ26 DQ27 DQ8 VCC /WE /OE VSS DQ28 DQ29 DQ30 DQ31 DQ7 A10R A10R

ELECTRICAL CHARACTERISTICS

Voltage on Any Pin Relative to VSS VIN, VOUT -1.0 to +7.0 V Voltage on VCC Supply Relative to VSS VCC -1.0 to +7.0 V Short Circuit Output Current IOS mA Power Dissipation PD * W Operating Temperature TOPR 0 to +70 Storage Temperature TSTG -40 to +125 * Ta = 25°C Recommended Operating Conditions ( Ta = 0°C to +70°C ) Parameter Symbol Min. Typ. Max. Unit VCC 4.5 5.0 5.5 V Power Supply Voltage VSS V Input High Voltage VIH 2.4 6.5 V Input Low Voltage VIL -1.0 0.8 V Capacitance ( VCC = 5V ± 10%, Ta = 25°C, f = 1 MHz ) Parameter Symbol Typ. Max. Unit Input Capacitance (A0 - A9, A10R) CIN1 pF Input Capacitance (/WE) CIN2 pF Input Capacitance (/RAS0, /RAS2) CIN3 pF Input Capacitance (/CAS0- /CAS3) CIN4 pF I/O Capacitance (DQ0 - DQ31) CDQ pF Note: Capacitance measured with Boonton Meter.

(VCC = 5V ± 10%, Ta = 0°C to +70°C ) MSC2323267D -60BS4/DS4 MSC2323267D -70BS4/DS4 Parameter Symbo l Condition Min. Max. Min. Max. Unit Note Input Leakage Current ILI 0V ≤ VIN ≤ 6.5V; All other pins not under test = 0V -40 -40 µA Output Leakage Current ILO DQ disable 0V ≤ VOUT ≤ 5.5V -10 -10 µA Output High Voltage VOH IOH = -5.0mA 2.4 VCC 2.4 VCC V Output Low Voltage VOL IOL = 4.2mA 0.4 0.4 V Average Power Supply Current (Operating) ICC1 /RAS, /CAS cycling, tRC = Min. 440 400 mA 1, 2 /RAS, /CAS = VIH mA Power supply current (Standby) ICC2 /RAS, /CAS ≥ VCC -0.2V mA Average Power Supply Current (/RAS only refresh) ICC3 /RAS cycling, /CAS = VIH, tRC = Min. 440 400 mA 1, 2 Average Power Supply Current (/CAS before /RAS refresh) ICC6 /RAS cycling, /CAS before /RAS 440 400 mA 1, 2 Average Power Supply Current (Fast Page Mode) ICC7 /RAS = VIL, /CAS cycling, tHPC = Min. 400 360 mA 1, 3 Notes: 1. ICC Max. is specified as ICC for output open condition. Address can be changed once or less while /RAS = VIL. Address can be changed once or less while /CAS = VIH.

AC Characteristics (1/2) (VCC = 5V ± 10%, Ta = 0°C to +70°C ) Note: 1, 2, 3 MSC2323267D -60BS4/DS4 MSC2323267D -70BS4/DS4 Parameter Symbol Min. Max. Min. Max. Unit Note Random Read or Write Cycle Time tRC 104 124 ns Fast Page Mode Cycle Time tHPC ns Access Time from /RAS tRAC ns 4, 5, 6 Access Time from /CAS tCAC ns 4, 5 Access Time from Column Address tAA ns 4, 6 Access Time from /CAS Precharge tCPA ns Output Low Impedance Time from /CAS tCLZ ns Data Output Hold After /CAS Low tDOH ns /CAS to Data Output Buffer Turn-off Delay Time tCEZ ns 7, 8 /RAS to Data Output Buffer Turn-off Delay Time tREZ ns 7, 8 /WE to Data Output Buffer Turn-off Delay Time tWEZ ns Transition Time tT ns Refresh Period tREF ms /RAS Precharge Time tRP ns /RAS Pulse Width tRAS 10K 10K ns /RAS Pulse Width (Fast Page Mode with EDO) tRASP 100K 100K ns /RAS Hold Time tRSH ns /CAS Precharge Time (Fast Page Mode with EDO) tCP ns /CAS Pulse Width tCAS 10K 10K ns /CAS Hold Time tCSH ns /CAS to /RAS Precharge Time tCRP ns /RAS Hold Time from /CAS Precharge tRHCP ns /RAS to /CAS Delay Time tRCD ns /RAS to Column Address Delay Time tRAD ns Row Address Set-up Time tASR ns Row Address Hold Time tRAH ns Column Address Set-up Time tASC ns Column Address Hold Time tCAH ns Column Address to /RAS Lead Time tRAL ns Read Command Set-up Time tRCS ns Read Command Hold Time tRCH ns Read Command Hold Time referenced to /RAS tRRH ns

AC Characteristics (2/2) (VCC = 5V ± 10%, Ta = 0°C to +70°C ) Note: 1, 2, 3 MSC2323267D -60BS4/DS4 MSC2323267D -70BS4/DS4 Parameter Symbol Min. Max. Min. Max. Unit Note Write Command Set-up Time tWCS ns Write Command Hold Time tWCH ns Write Command Pulse Width tWP ns /WE Pulse Width (DQ Disable) tWPE ns Write Command to /RAS Lead Time tRWL ns Write Command to /CAS Lead Time tCWL ns Data-in Set-up Time tDS ns Data-in Hold Time tDH ns /CAS Active Delay Time from /RAS Precharge tRPC ns /RAS to /CAS Set-up Time (/CAS before /RAS) tCSR ns /RAS to /CAS Hold Time (/CAS before /RAS) tCHR ns

Notes: 1. A start-up delay of 200µs is required after power-up, followed by a minimum of eight initialization cycles (/RAS only refresh or /CAS before /RAS refresh) before proper device operation is achieved. The AC characteristics assumes tT = 2ns. VIH(Min.) and VIL(Max.) are reference levels for measuring input timing signals. Transition time (tT) are measured between VIH and VIL. This parameter is measured with a load circuit equivalent to 2TTL loads and 100pF. Operation within the tRCD(Max.) limit ensures that tRAC(Max.) can be met. tRCD(Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD(Max.) limit, then the access time is controlled by tCAC. Operation within the tRAD(Max.) limit ensures that tRAC(Max.) can be met. tRAD(Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD(Max.) limit, then the access time is controlled by tAA. tCEZ(Max.), tREZ(Max.) and tWEZ(Max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. tCEZ and tREZ must be satisfied for open circuit condition. tRCH or tRRH must be satisfied for a read cycle.