MSC2295 ETL | Alldatasheet
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N4–1/1 MAXIMUM RATINGS (T A = 25°C) Rating Symbol Value Unit Collector-Base Voltage V (BR)CBO 30 Vdc Collector-Emitter Voltage V (BR)CEO 20 Vdc Emitter-Base Voltage V (BR)EBO 5.0 Vdc Collector Current - Continuous I C 30 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation P D 200 mW Junction Temperature T J 150 °C Storage Temperature T stg -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Symbol Min Max Unit Collector-Base Cutoff Current I CBO — 0.1 µAdc (V CB = 10 Vdc, I E = 0) DC Current Gain (1) h FE — (V CB = 10 Vdc, I C = –1.0 mAdc) MSC2295-BT1 70 140 MSC2295-CT1 110 220 Collector-Gain - Bandwidth Product f T 150 — MHz (V CB = 10 Vdc, I E = –1.0 mAdc) Reverse Transistor Capacitance C re — 1.5 pF (V CE = 10 Vdc, I C = 1.0 mAdc, f = 10.7 MHz) 1. Pulse Test: Pulse Width < 300 ms, D.C.< 2%. DEVICE MARKING The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. MSC2295-BT1 MSC2295-CT1 NPN RF Amplifier Transistors Surface Mount CASE 318D–03, STYLE1 SC–59 COLLECTOR 2 1 BASE EMITTER VB X VC X Marking Symbol MSC2295-BT1 MSC2295-CT1