MSB710 ETL | Alldatasheet
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N3–1/1 MSB710-RT1 PNP General Purpose Amplifier Transistor Surface Mount CASE 318D–04, STYLE1 SC–59 MAXIMUM RATINGS (T A = 25°C) Rating Symbol Value Unit Collector-Base Voltage V (BR)CBO –60 Vdc Collector-Emitter Voltage V (BR)CEO –50 Vdc Emitter-Base Voltage V (BR)EBO –7.0 Vdc Collector Current - Continuous I C –500 mAdc Collector Current - Peak I C(P) –1.0 Adc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation P D 200 mW Junction Temperature T J 150 °C Storage Temperature T stg –55 ~ +150 °C DEVICE MARKING The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. COLLECTOR 2 1 BASE EMITTER CR X