MSB709 ETL | Alldatasheet
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N2–1/1 PNP General Purpose Amplifier Transistor Surface Mount CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS (T A = 25 °C) Rating Symbol Value Unit Collector-Base Voltage V (BR)CBO –60 Vdc Collector-Emitter Voltage V (BR)CEO –45 Vdc Emitter-Base Voltage V (BR)EBO –7.0 Vdc Collector Current - Continuous I C –100 mAdc Collector Current - Peak I C(P) –200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation P D 200 mW Junction Temperature T J 150 °C Storage Temperature T stg –55 ~ +150 °C ELECTRICAL CHARACTERISTICS (T A = 25 °C) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC =–2.0mAdc,IB=0) V (BR)CEO –45 — Vdc Collector-Base Breakdown Voltage (IC =–10µAdc,IE=0) V (BR)CBO –60 — Vdc Emitter-Base Breakdown Voltage (IE =–10µAdc,IE=0) V (BR)EBO –7.0 — Vdc Collector-Base Cutoff Current (VCB =–45Vdc, IE=0) I CBO — –0.1 µAdc Collector-Emitter Cutoff Current (VCE =–10Vdc, IB=0) I CEO — –100 nAdc DC Current Gain (1) hFE1 210 340 —(VCE =–10Vdc, IC = –2.0mAdc) Collector-Emitter Saturation Voltage VCE(sat) — –0.5 Vdc(IC = –100mAdc, IB=–10mAdc) 1. Pulse Test: Pulse Width 300 µs, D.C. 2%. DEVICE MARKING Marking Symbol The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. COLLECTOR 2 1 BASE EMITTER AR X < < MSB709-RT1