MSA1022 ETL | Alldatasheet
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N1–1/1 PNP RF Amplifier Transistor Surface Mount CASE 318D–03, STYLE1 SC–59 EC X MAXIMUM RATINGS (T A = 25 °C) Rating Symbol Value Unit Collector-Base Voltage V CBO –30 Vdc Collector-Emitter Voltage V CEO –20 Vdc Emitter-Base Voltage V EBO –5.0 Vdc Collector Current - Continuous I C –30 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation P D 200 mW Junction Temperature T J 150 °C Storage Temperature T stg -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (T A = 25 °C) Characteristic Symbo lMin Max Unit Collector Cutoff Current I CBO — –0.1 µAdc(V CB = –10 Vdc, I E = 0) Collector-Emitter Breakdown Voltage I CEO — –100 µAdc(V CE = –20 Vdc, I B = 0) Emitter-Base Breakdown Voltage I EBO — –10 µAdc(V EB = –5.0 Vdc, I C = 0) DC Current Gain (1) h FE 110 220 —(V CE = –10 Vdc, I C = –1.0 mAdc) Current-Gain - Bandwidth Product f T 150 — MHz(V CB = –10 Vdc, I E = 1.0 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. COLLECTOR 2 1 BASE EMITTER MSA1022–CT1 DEVICE MARKING Marking Symbol The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.