MMST2222A JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors MMST2222A TRANSISTOR ( NPN )

FEATURES

y Epitaxial planar die construction y Complementary PNP Type available(MMST2907A) MARKING: K3P MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 75 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 600 mA P C Collector Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) Parameter Symbol Test conditions Min T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C = 10μA, I E =0 75 V Collector-emitter breakdown voltage V (BR)CEO I C = 10mA, I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =0 6 V Collector cut-off current I CBO V CB =70 V, I E =0 100 nA Collector cut-off current I CEO V CE =35V , I B =0 100 nA Emitter cut-off current I EBO V EB = 3V , I C =0 100 nA h FE(1) V CE =10V, I C =0.1mA 35 h FE(2) V CE =10V, I C = 1mA 50 h FE(3) V CE =10V, I C = 10mA 75 h FE(4) V CE =10V, I C = 150mA 100 300 h FE(5) V CE =10V, I C = 500mA 40 DC current gain h FE(6) V CE =1V, I C = 150mA 35 Collector-emitter saturation voltage V CE (sat) I C =500 mA, I B = 50mA I C =150 mA, I B =15mA 1 0.3 V Base-emitter saturation voltage V BE (sat) I C =500 mA, I B = 50mA I C =150 mA, I B =15mA 2.0 1.2 V Transition frequency f T V CE =20V, I C = 20mA f=100MHz 300 MHz Output Capacitance C ob V CB =10V, I E = 0,f=1MHz 8 pF Delay time t d 10 n s Rise time t r V CC =30V, V BE(off) =-0.5V I C =150mA , I = 15mA 25 n s Storage time t S 225 n s Fall time t f V CC =30V, I C =150mA I =-I =15mA 60 n s SOT-323 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com C,Dec,2015 JC(T

0.1 1 10 100 0.1 1 10 100 100 200 300 400 500 0.1 100 0 25 50 75 100 125 150 100 200 300 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 02468 1 0 1 2 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 0.0 0.4 0.8 1.2 f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER V CE =10V 600 I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 100 V BE I C COMMON EMITTER V CE =10V 600 T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) P c —— T a COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( ) h FE 600 β=10 T a =100 T a =25 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) Static Characteristic 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA COMMON EMITTER T a =25 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) 600 β=10 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) 500 I C f T COMMON EMITTER V CE =20V Ta=25 TRANSTION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) www.cj-elec.com 2 A,Jun,2014www.cj-elec.com C,Dec,2015 Typical Characteristics

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Dec,2015

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Dec,2015