MMBT1010 ETL | Alldatasheet
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Technical content
O3–1/1 MMBT1010LT1 MSD1010T1 CASE 318–08, STYLE 6 SOT– 23 MAXIMUM RATINGS ( T A = 25°C) Rating Symbol Value Unit Collector-Base Voltage V (BR)CBO 45 Vdc Collector-Emitter Voltage V (BR)CEO 15 Vdc Emitter-Base Voltage V (BR)EBO 5.0 Vdc Collector Current — Continuous I C 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation P D (1) 250 mW T A =25 °C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Junction Temperature T J 150 °C Storage Temperature Range T stg –55 —+150 °C DEVICE MARKING MMBT1010LT1 = GLP; MSD1010T1 = GLP
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Condition Min Max Unit Collector-Emitter Breakdown Voltage V (BR)CEO I C = 10 mA, I B = 0 15 — Vdc Emitter-Base Breakdown Voltage V (BR)EBO I E = 10 µA,I E = 0 5.0 — Vdc Collector-Base Cutoff Current I CBO V CB = 20 V, I E = 0 — 0.1 µA Collector-Emitter Cutoff Current I CEO V CE = 10 V, I B = 0 — 100 µA DC Current Gain h FE1 (2) V CE = 5 V,I C = 100 mA 300 600 — Collector-Emitter Saturation Voltage V CE(sat)(2) I C = 10 mA, I B = 1.0 mA — 0.1 Vdc I C = 50 mA, I B = 5.0 mA — 0.1 I C = 100 mA, I B = 10 mA 0.19 Base-Emitter Saturation Voltage V BE(sat)(2) I C = 100 mA, I B = 10 mA — 1.1 Vdc (1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width <300 µs, D.C <2%. Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. Low V CE(sat) , < 0.1 V at 50 mA
Applications
LCD Backlight Driver Annunciator Driver General Output Device Driver PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT CASE 318D –04, STYLE 1 SC– 59 EMITTER COLLECTOR BASE