MBT3906DW1T1

MBT3904DW ETL | Alldatasheet

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MBT3904–1/12 Dual General Purpose Transistors MAXIMUM RATINGS Rating Symbol Voltage Unit Collector–Emitter Voltage V CEO V MBT3904DW1T1 (NPN) 40 MBT3906DW1T1 (PNP) –40 Collector–Base Voltage V CBO V MBT3904DW1T1 (NPN) 60 MBT3906DW1T1 (PNP) –40 Emitter–Base Voltage V EBO V MBT3904DW1T1 (NPN) 6.0 MBT3906DW1T1 (PNP) –5.0 Collector Current -Continuous I C mAdc MBT3904DW1T1 (NPN) 200 MBT3906DW1T1 (PNP) –200 Electrostatic Discharge ESD HBM>16000, V MM>2000 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation(1) P D 150 mW TA = 25°C Thermal Resistance, R θJA 833 °C/WJunction to Ambient Junction and Storage T J , T stg –55 to +150 °C Temperature 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. See Table SOT–363/SC–88 CASE 419B STYLE 1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 MBT3906DW1T1 1 32 6 45 Q 1Q 2 1 32 6 45 Q 1Q 2 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low–power surface mount applications where board space is at a premium.  h FE , 100–300  Low VCE(sat) , 3 0.4 V  Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 1 32 6 45 Q 1Q 2 *Q 1 same as MBT3906DW1T1 Q 2 same as MBT3904DW1T1

ORDERING INFORMATION

MBT3904DW1T1 SOT–363 3000 Units/Reel MBT3906DW1T1 SOT–363 3000 Units/Reel MBT3946DW1T1 SOT–363 3000 Units/Reel

MBT3904–2/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) V (BR)CEO Vdc (I C = 1.0 mAdc, I B = 0) MBT3904DW1T1 (NPN) 40 — (I C = –1.0 mAdc, I B = 0) MBT3906DW1T1 (PNP) –40 — Collector–Base Breakdown Voltage V (BR)CBO Vdc (I C = 10 µAdc, I E = 0) MBT3904DW1T1 (NPN) 60 — (I C = –10 µAdc, I E = 0) MBT3906DW1T1 (PNP) –40 — Emitter–Base Breakdown Voltage V (BR)EBO Vdc (I E = 10 µAdc, I C = 0) MBT3904DW1T1 (NPN) 6.0 — (I E = –10 µAdc, I C = 0) MBT3906DW1T1 (PNP) –5.0 — Base Cutoff Current I BL nAdc (V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN) — 50 (V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP) — –50 Collector Cutoff Current I CEX nAdc (V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN) — 50 (V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP) — –50 ON CHARACTERISTICS (2) DC Current Gain h FE Vdc (I C = 0.1 mAdc, V CE = 1.0 Vdc) MBT3904DW1T1 (NPN) 40 — (I C = 1.0 mAdc, V CE = 1.0 Vdc) 70 — (I C = 10 mAdc, V CE = 1.0 Vdc) 100 — (I C = 50 mAdc, V CE = 1.0 Vdc) 60 — (I C = 100 mAdc, V CE = 1.0 Vdc) 30 — (I C = –0.1 mAdc, V CE = –1.0 Vdc) MBT3906DW1T1 (PNP) 60 — (I C = –1.0 mAdc, V CE = –1.0 Vdc) 80 — (I C = –10 mAdc, V CE = –1.0 Vdc) 100 — (I C = –50 mAdc, V CE = –1.0 Vdc) 60 — (I C = –100 mAdc, V CE = –1.0 Vdc) 30 — Collector–Emitter Saturation Voltage V CE(sat) Vdc (I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) — 0.2 (I C = 50 mAdc, I B = 5.0 mAdc) — 0.3 (I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP) — – 0.25 (I C = –50 mAdc, I B = –5.0 mAdc) — –0.4 Base–Emitter Saturation Voltage V BE(sat) Vdc (I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) 0.65 0.85 (I C = 50 mAdc, I B = 5.0 mAdc) — 0.95 (I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP) –0.65 –0.85 (I C = –50 mAdc, I B = –5.0 mAdc) — –0.95 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f T MHz (I C = 10 mAdc, V CE = 20 Vdc, MBT3904DW1T1 (NPN) 300 — f = 100 MHz) C = –10 mAdc, V CE = –20 Vdc, MBT3906DW1T1 (PNP) 250 — f = 100 MHz) Output Capacitance C obo pF (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) — 4.0 (V CB = –5.0 Vdc, I E = 0, MBT3906DW1T1 (PNP) — 4.5 f = 1.0 MHz) Input Capacitance C ibo pF (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) — 8.0 (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)MBT3906DW1T1 (PNP) — 10.0 2. Pulse Test: Pulse Width < 300 ms; Duty Cycle< 2.0%.

MBT3904–3/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit Input Impedance h ie k Ω (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 1.0 10 (V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 2.0 12 Voltage Feedback Ratio h re X 10 –4 (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 0.5 8.0 (V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 0.1 10 Small–Signal Current Gain h fe — (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 100 400 (V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 100 400 Output Admittance h oe µmhos (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 1.0 40 (V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 3.0 60 Noise Figure NF dB CE = 5.0 Vdc, I C = 100 µAdc, MBT3904DW1T1 (NPN) — 5.0 R S = 1.0 k W, f = 1.0 kHz) (V CE = –5.0 Vdc, I C = –100 µAdc, MBT3906DW1T1 (PNP) — 4.0 R S = 1.0 k W, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc) MBT3904DW1T1 (NPN) t d —3 5 n s (V CC = –3.0 Vdc, V BE = 0.5 Vdc) MBT3906DW1T1 (PNP) — 35 Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc) MBT3904DW1T1 (NPN) t r —3 5 n s (I C = –10 mAdc, I B1 = –1.0 mAdc) MBT3906DW1T1 (PNP) — 35 Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc) MBT3904DW1T1 (NPN) t s — 200 ns (V CC = –3.0 Vdc, I C = –10 mAdc) MBT3906DW1T1 (PNP) — 225 Fall Time (I B1 = I B2 = 1.0 mAdc) MBT3904DW1T1 (NPN) t f —5 0 n s (I B1 = I B2 = –1.0 mAdc) MBT3906DW1T1 (PNP) — 70