BD110 ETL | Alldatasheet
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MBD110–1/5 Dual SCHOTTKY Barrier Diodes MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage MBD110DWT1 V R 7.0 Vdc MBD330DWT1 30 MBD770DWT1 70 Forward Power Dissipation P F 120 mW T A = 25°C Junction Temperature T J –55 to +125 °C Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5 Thermal Clad is a trademark of the Bergquist Company. SOT–363 CASE 419B–01, STYLE 6 MBD110DWT1 MBD330DWT1 MBD770DWT1 Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six– leaded package. The SOT–363 is ideal for low–power surface mount applications where board space is at a premium, such as portable products. 12 3 Anode N/C Cathode Cathode N/C Anode 65 4 Surface Mount Comparisons: SOT–363 SOT–23 Area (mm 2 ) 4.6 7.6 Max Package P D (mW) 120 225 Device Count 2 1 Space Savings: Package 1 × SOT–23 2 × SOT–23 SOT–363 40% 70% The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage
MBD110–2/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V (BR)R Volts (I R = 10 µA) MBD110DWT1 7.0 10 — MBD330DWT1 30 — — MBD770DWT1 70 — — Diode Capacitance C T pF (V R = 0, f = 1.0 MHz, Note 1) MBD110DWT1 — 0.88 1.0 Total Capacitance C T pF (V R = 15 Volts, f = 1.0 MHz) MBD330DWT1 — 0.9 1.5 (V R = 20 Volts, f = 1.0 MHz) MBD770DWT1 — 0.5 1.0 Reverse Leakage I R (V R = 3.0 V) MBD110DWT1 — 0.02 0.25 µA (V R = 25 V) MBD330DWT1 — 13 200 nAdc (V R = 35 V) MBD770DWT1 — 9.0 200 nAdc Noise Figure NF dB (f = 1.0 GHz, Note 2) MBD110DWT1 — 6.0 — Forward Voltage V F Vdc (I F = 10 mA) MBD110DWT1 — 0.5 0.6 (I F = 1.0 mAdc) MBD330DWT1 — 0.38 0.45 (I F = 10 mA) — 0.52 0.6 (I F = 1.0 mAdc) MBD770DWT1 — 0.42 0.5