MBD54D ETL | Alldatasheet
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MBD54–1/4 Dual SCHOTTKY Barrier Diodes MAXIMUM RATINGS (T = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage V R 30 Volts Forward Power Dissipation P F @ T A = 25°C 150 mW Derate above 25°C 1.2 mW/°C Forward Current (DC) I F 200 Max mA Junction Temperature T J 125 Max °C Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING MBD54DWT1 = BL ELECTRICAL CHARACT ERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 µA) V (BR)R 30 — — Volts Total Capacitance (V R = 1.0 V, f = 1.0 MHz) C T — 7.6 10 pF Reverse Leakage (V R = 25 V) I R — 0.5 2.0 µAdc Forward Voltage (I F = 0.1 mAdc) V F — 0.22 0.24 Vdc Forward Voltage (I F = 30 mAdc) V F — 0.41 0.5 Vdc Forward Voltage (I F = 100 mAdc) V F — 0.52 1.0 Vdc Reverse Recovery Time t rr — — 5.0 ns (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1 Forward Voltage (I F = 1.0 mAdc) V F — 0.29 0.32 Vdc Forward Voltage (I F = 10 mAdc) V F — 0.35 0.40 Vdc Forward Current (DC) I F — — 200 mAdc Repetitive Peak Forward Current I FRM — — 300 mAdc Non–Repetitive Peak Forward Current (t <1.0s) I FSM — — 600 mAdc SOT–363 CASE 419B–01, STYLE 6 MBD54DWT1 12 3 Anode N/C Cathode Cathode N/C Anode 65 4 These SCHOTTKY barrier diodes are designed for high speed switching applications, circuit protection, and vol tage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage — 0.35 V @ I F = 10 mAdc
30 VOLTS
DUAL HOT–CARRIER DETECTOR AND SWITCHING DIODES
MBD54–3/4 Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection MBD110DWT1 MBD330DWT1 MBD770DWT1 INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT–363 0.5 mm (min) SOT–363 POWER DISSIPATION 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm The power dissipation of the SOT–363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max) , the maximum rated junction temperature of the die, R qJA , the thermal resistance from the device junction to ambient, and the operating temperature, T A . Using the values provided on the data sheet for the SOT–363 package, PD can be calculated as follows: P D = T J(max) – T A R θJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature T A of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. P D = 150°C – 25°C = 150 milliwatts 833°C/W The 833°C/W for the SOT–363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dis- sipation from the SOT–363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladE. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to com- plete soldering within a short time could result in de- vice failure. Therefore, the following items should al- ways be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and sol- dering should be 100°C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. The soldering temperature and time shall not exceed 260°C for more than 10 seconds. When shifting from preheating to soldering, the maxi- mum temperature gradient shall be 5°C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied dur- ing cooling. * Soldering a device without preheating can cause ex- cessive thermal shock and stress which can result in damage to the device.
MBD54–4/4 MBD110DWT1 MBD330DWT1 MBD770DWT1 PACKAGE DIMENSIONS SC–88 (SOT–363) CASE 419B–01 ISSUE G STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 S A N J B D 6 PL 6 5 4 321 0.2 (0.008) M B M C H K G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 G 0.026BSC 0.65BSC J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 V 0.012 0.016 0.30 0.40