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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LT D TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP)
FEATURES
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter Va lue Unit VCBO Collector-Base Vo ltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Contin uous -800 mA PC Collector Power Dissip ation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Tempe rature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified) P a r a m e t e r Symbol Test conditions Min Max Unit Collector-base b reakdown voltage V(BR)CBO I C= -100μA, IE=0 -40 V Collector-emitter br eakdown voltage V(BR)CEO*I C= -0.1mA , I B=0 -25 V Emitter-base b reakdown voltage V(BR)EBO I E= -100μA, IC=0 -6 V Collector cut-o ff current ICBO V CB= -35V , I E=0 -0.1 μA Collector cut-o ff current ICEO V CE= -20V , I B=0 -0.1 μA hFE(1) V CE=-1V, IC=-5mA hFE(2) V CE=-1V, IC=-100mA 80
400 DC current ga
hFE(3) V CE=-1V, IC=-800mA 40 Collector-emitter satur ation voltage VCE(sat) I C= -800mA, IB=-80mA -0.5 V Base-emitter satur ation voltage VBE(sat) I C=-800mA, IB=-80mA -1.2 V Trans ition frequency fT VCE=-6V, IC= -20mA f=30MHz
150 MHz
*Pulse Test: pulse wid th ≤ 300µs,duty cycle ≤2%. TO-92 1.EMITTE R 2. COLLECTOR 3.BASE CLASSIFICATION OF h FE(2) Rank B C D D3 Range 80-160 120-200 160-300 300-400 www.cj-elec.com 1 D,Dec,2015
x A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Layout www.cj-elec.com 2 D,Dec,2015
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