M8550 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550 TRANSISTOR （ PNP ）
FEATURES
PCM : 0.625 W（Tamb=25℃） Collector current ICM : -1 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μ A ， IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μ A， IC=0 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 μ A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 μ A hFE(1) VCE=-1V, IC=-5mA hFE(2) VCE=-1V, IC=-100mA 300 DC current gain hFE（3） VCE=-1V, IC=-800mA Collector-emitter saturation voltage VCE(sat) IC= -800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Transition frequency f T VCE=-6V, IC= -20mA f=30MHz 150 MHz * Pulse Test ：pulse width ≤ 300µs，duty cycle ≤2%。 1 2 3 TO—92 1.EMITTER 2. BASE 3. COLLECTOR