M8050S JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050S TRANSISTOR (NPN)
FEATURES
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter Value Unit VCBO Collector-Base Volt age 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuo us 800 mA PC Collector Power Dissipa tion 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temper ature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Max Unit Collector-base br eakdown voltage V(BR)CBO I C= 100μA,IE=0 40 V Collector-emitter brea kdown voltage V(BR)CEO* I C= 1mA, IB=0 25 V Emitter-base br eakdown voltage V(BR)EBO I E= 100μA, IC=0 6 V Collector cut-off cu rrent ICBO V CB= 35V, IE=0 0.1 μA Collector cut-off current ICEO V CE= 20V, IB=0 0.1 μA hFE(1) V CE=1V, IC= 5 m A 4 5 hFE(2) V CE=1V, IC=100mA 80 400 DC current gain hFE(3) V CE=1V, IC=800mA 40 Collector-emitter saturatio n voltage VCE(sat) I C= 800mA, IB=80mA 0.5 V Base-emitter saturatio n voltage VBE(sat) I C=800mA, IB= 80mA 1.2 V Transition frequency fT V CE=6V, IC= 20mA , f=30MHz 150 MHz * Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%. TO-92 1.EMITTER 2. COLLECTOR BASE CLASSIFICATION OF h FE(2) Rank B C D D3 Range 80-160 120- 200 160-300 300-400 www.cj-elec.com 1 D,Dec,2015
A 3. 300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Layout www.cj-elec.com 2 D,Dec,2015
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