M8050 JIANGSU | Alldatasheet
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050 TRANSISTOR （ NPN ）
FEATURES
PCM : 0.625 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μ A ， IE=0 V Collector-emitter breakdown voltage V(BR)CEO* IC= 0.1mA , IB=0 V Emitter-base breakdown voltage V(BR)EBO IE= 100μ A， IC=0 V Collector cut-off current ICBO VCB= 35V , IE=0 0.1 μ A Collector cut-off current ICEO VCE= 20V , IB=0 0.1 μ A hFE(1) VCE=1V, IC=5mA hFE(2) VCE=1V, IC=100mA 300 DC current gain hFE（3） VCE=1V, IC=800mA Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V Transition frequency f T VCE=6V, IC= 20mA , f=30MHz 150 MHz * Pulse Test ：pulse width ≤ 300µs，duty cycle ≤2%。 1 2 3 TO—92 1.EMITTER 2. BASE 3. COLLECTOR
D b E A C L e TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L Ö Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 Max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 Min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 Max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 Dimensions In Millimeters Dimensions In Inches 0.050TYP 1.270TYP φ