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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S TRANSISTOR (NPN)
FEATURES
Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 6 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA Collector cut-off current ICEO VCE=20V, IB=0 5 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=1mA 290 hFE(2) VCE=1V, IC=100mA 300 1000 hFE(3) VCE=1V, IC=300mA 300 DC current gain hFE(4) VCE=1V, IC=500mA 300 Collector-emitter saturation voltage VCE(sat) IC=600mA, IB=20mA 0.55 V Transition frequency fT VCE=10V,IE=50mA, f=1MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 9 pF CLASSIFICATION OF hFE(2) RANK B C D RANGE 300–550 500–700 650–1000 MARKING 28S SOT–23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com C,Oct,2014 JC(T
0.1 100 1000 11 0 1 0 0 100 1000 0 25 50 75 100 125 150 100 150 200 250 1 10 100 1000 100 1000 0.1 1 10 100 1000 1 10 100 1000 100 1000 012345 100 120 140 160 1 10 100 1000 100 1000 V CE =1V COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) I C V BE Ta=100 Ta=25 I C f T TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =10V Ta=25 COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) I C V BEsat β=30 Ta=100 Ta=25 2000 Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) V CB / V EB C ob / C ib f=1MHz I E =0/I C Ta=25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) Ta=100 Ta=25 V CE =1V I C h FE 2000 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA I B =20uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic COMMON EMITTER Ta=25 β=30 Ta=100 Ta=25 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat www.cj-elec.com 2 A,Jun,2014www.cj-elec.com C,Oct,2014 Typical Characteristics
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Oct,2014
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