M1MA151KT1 ETL | Alldatasheet

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H2–1/2 M1MA151KT1 M1MA152KT1 CASE 318D–03, STYLE2 SC–59 SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100mA SURFACE MOUNT Single Silicon Switching Diodes MAXIMUM RATINGS (T A = 25°C) Rating Symbol Value Unit Reverse Voltage M1MA151KT1 V R 40 Vdc M1MA152KT1 80 Peak Reverse Voltage M1MA151KT1 V RM 40 Vdc M1MA152KT1 80 Forward Current I F 100 mAdc Peak Forward Current I FM 225 mAdc Peak Forward Surge Current I FSM (1) 500 mAdc THERMAL CHARACTERISTICS Rating Symbo lMax Unit Power Dissipation P D 200 mW Junction Temperature T J 150 °C Storage Temperature T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage CurrentM1MA151KT1 I R V R = 35 V — 0.1 µAdc M1MA152KT1 V R = 75 V — 0.1 Forward Voltage V F I F = 100 mA — 1.2 Vdc Reverse Breakdown Voltage M1MA151KT1 V R I R = 100 µA 40 — Vdc M1MA152KT1 80 — Diode Capacitance C D V R = 0, f = 1.0 MHz — 2.0 pF Reverse Recovery Time t rr (2) I F = 10 mA, V R = 6.0 V, — 3.0 ns R L = 100Ω , I rr = 0.1 I R 1. t = 1 SEC 2. t rr Test Circuit 2 1 ANODE NO CONNECTION CATHODE These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC- 59 package which is designed for low power surface mount applications.

  • Fast t rr , < 3.0 ns  Low C D , < 2.0 pF  Available in 8 mm Tape and Reel Use M1MA151/2KT1 to order the 7 inch/3000 unit reel. Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.

H2–2/2 M1MA151KT1 M1MA152KT1 R L t r t p t 10% 90% V R t p = 2 µs t r = 0.35 ns I F t rr t I rr = 0.1 I R I F = 10 mA V R = 6 V R L = 100 Ω RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE Marking Symbol MH X Type No. 151K 152K Symbol M H M I The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. DEVICE MARKING—EXAMPLE