LTIR13733-P1-PF LIGITEK | Alldatasheet

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LTIR13733/P1-PFDOC. NO : QW0905- REV. : B DATE : - 200621 - Apr. LTIR13733/P1-PF DATA SHEET INFRARED EMITTING DIODES LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Pb Lead-Free Parts

PART NO. 2. Suitable for pulsed applications. 3. Low average degradation. 1. High radiant intensity. The LTIR13733/P1-PF series are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in water clear plastic Device Selection Guide: Descriptions: Features: 8.6 1.5MAX 11.5±0.5 MATERIAL AlGaAs PART NO LTIR13733/P1-PF LENS COLOR Water Clear T-1 3/4 package individually 2.54TYP 25.0MIN 1.0MIN Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. + - □0.5 TYP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 7.6 5.95.0 Package Dimensions LTIR13733/P1-PF Page

-40 ~ +85 -40 ~ +85 Ratings Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The radiant intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PD Power Dissipation Radiant Intensity Forward Voltage Spectral Line Half Width Peak Emission Wavelength Aperture Radiant Incidence Reverse Current Viewing Angle 2θ1/2 IR 100 VF Ee λpeak Le 865 1.4 1.65 2.01.43 PARAMETER Reverse Voltage Storage Temperature Operating Temperature Electrostatic Discharge Electrical Optical Characteristics (Aa=25) ℃ SYMBOL Typ.Min.Max. Vr ESD Tstg Topr LTIR13733/P1-PF Absolute Maximum Ratings at Ta=25 ℃ Forward Current Peak Forward Current (300PPS,10μs Pulse) Parameter PART NO. IF IFP Symbol mW VR=5V deg μA IF=20mA IF=20mA IF=20mA IF=20mA IF=20mAnm V nm mW/cm mW/sr TEST CONDITIONUNIT V V mA UNIT 1 A Page2/7 Rise Time TR － 15 － ns IF=50mA Fall Time TF － 6.3 － ns IF=50mA

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Typical Electro-Optical Characteristics Curve Page3/7 Relative Radiant Intensity Normalize @20mA Forward Current [mA] Relative Radiant Power @ 20mA, Normalize @ 25℃ Forw ard DC Voltage @ 20 mA Normalize @ 25℃ -40 Ambient Temperature [℃] 0.8 0.9 -20-4020 060 40100 80 0.5 1.0 Ambient Temperature [℃] 0-2040 20100 6080 750 Fig.6 Relative Radiant Power vs. Temperature Fig.4 Relative Radiant Power vs. Forward Peak Current Relative Radiant Power Normalized @ 100 mA Relative Radiant Power Normalized @ 20mA Fig.5 Forward DC Voltage vs. Temperature IFDC[mA] 1.2 1.1 1.0 0.1 1.0 2.5 2.0 1.5 3.0 100 0.1 Forward Voltage[V] Fig 3. Relative Radiant Power vs. Forward DC Current 10.0 1.0 1.0 0.51.02.0 1.5 1.0 10.0 3.02.54.0 3.5 0.0 IFPK[mA] 1001000 950 Wavelength[nm] 850800900 10001050 Fig.2 Relative Radiant Power vs. WavelengthFig 1. Froward Current vs. Forward Voltage 1000 100 TIR CHIP 0.5 1.0 PART NO. LTIR13733/P1-PF

Cleaning: Use alcohol-based cleaning solvents such as isopropyl alcohol to clean the LED. ESD(Electrostatic Discharge): Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Storage time: 1.The operation of Temperatures and RH are : 5℃~35℃,RH<60%. 2.Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with descanting agent. Considering the tape life, we suggest our customers to use our products within a year(from production date). 3.If opened more than one week in an atmosphere 5 ℃ ~ 35℃,RH<60%, they should be treated at 60℃±5 ℃fo r 15hrs. Drive Method: LED is a current operated device, and therefore, require some kind of current limiting incorporated into the driver circuit. This current limiting typically takes the form of a current limiting resistor placed in series with the LED. Consider worst case voltage variations than could occur across the current limiting resistor. The forwrd current should not be allowed to change by more than 40% of its desired value. (A) Recommended circuit. (B) The difference of brightness between LED could be found due to the VF-IF characteristics of LED. Circuit model A PART NO. Circuit model B LED LED LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7

  1. The LED lamps are designed for high-density mount- ing and have a structure which can alleviate mechan- ical stress due to clinching . Nevertheless , take care to avoid the occurrence of residual mechanical stress due to clinching . Anode side(cathode side on GaAlAs chips) 45°15° Mounting: 1. If the leads are subjected to stress during soldering a printed circuit board, illumination failure may result immediately or later during use. For this reason, make sure that the intervals between the installation holes in the board are equal to the intervals between the leads (after forming if done) so that no stress is applied to the lead. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only (O) (O) PART NO. LTIR13733/P1-PF (X) Page 5/7

60 Seconds Max

Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to body) 00° 25° 120° Temp(°C) 260° PART NO. 2°/sec max 100 260°C3sec Max 5°/sec max 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7

This test intended to see soldering well performed or not. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 PART NO. High Temperature High Humidity Test Thermal Shock Test High Temperature Storage Test Low Temperature Storage Test Test Item Operating Life Test Reliability Test: The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. The purpose of this test is the resistance of the device under tropical for hours. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. 1.Ta=65 ℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs (10min) (10min) 2.total 10 cycles 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) Test Condition 1.Ta=85 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202:103B JIS C 7021: B-11 JIS C 7021: B-12 MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Description Reference Standard LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LTIR13733/P1-PF Page7/7