LSR2040-P1-PF LIGITEK | Alldatasheet

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DOC. NO : QW0905-LSR2040/P1-PF REV. : A DATE : 20 - Feb. - 2006 DATA SHEET LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SUPER BRIGHT ROUND TYPE LED LAMPS LSR2040/P1-PF Pb Lead-Free Parts

Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation -60° 25%75%100% 50% 0 25% 50% 75% -30° 30° 60° 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSR2040/P1-PF Package Dimensions Page 1/5 + - 25.0MIN 2.54TYP □0.5 TYP 1.0MIN 1.5MAX 5.2 10.55±0.5 4.2 4.03.0

Storage Temperature Tstg -40 ~ +100 ℃ Red Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Typical Electrical & Optical Characteristics (Ta=25 ℃) Emitted MATERIALPART NO LSR2040/P1-PF GaAlAs Spectral halfwidth △λnm Peak wave length λPnm Viewing angle 2θ 1/2 (deg) Red Diffused Lens 660 20 2.4 Max. 1.5 Min. Min. 36120 Typ. COLOR Luminous intensity @20mA(mcd) Forward voltage @20mA(V) Absolute Maximum Ratings at Ta=25 ℃ Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Operating Temperature Parameter Page 2/5 100 SR -40 ~ +85 Ratings 100 IF Topr Ir PD IFP Symbol mA30 μA mA mW UNIT LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSR2040/P1-PF

Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Curve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -20 0 20 40 60 1.0 1.1 1.2 600 650 700 750 0.0 0.5 1.0 2.0 3.0 4.0 5.0 80 100 0.8 0.9 -20-40 40 2008 0 1 0 0 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 SR CHIP Page 3/5 PART NO. LSR2040/P1-PF

60 Seconds Max

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 2.Wave Soldering Profile Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to body) 260°C3sec Max 5°/sec max Temp(°C) 260° Time(sec) 10050 150 120° 25° Preheat00° 2°/sec max Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) PART NO. LSR2040/P1-PF

MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 MIL-STD-202:103B JIS C 7021: B-11 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec (10min) (10min) 2.total 10 cycles 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. This test intended to see soldering well performed or not. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. The purpose of this test is the resistance of the device under tropical for hours. Low Temperature Storage Test Test Item Operating Life Test High Temperature Storage Test Reliability Test: JIS C 7021: B-12 MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Reference Standard LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, + 72hrs) 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, + 72hrs) 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, + 72hrs) Test Condition This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.

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