LSIR3833 LIGITEK | Alldatasheet

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zL, LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616 INFRARED EMITTING DIODES LSIR3833 DOC.NO : QW0905-LSIR3833 REV. : A DATE : 16-Jul-2004

[ie LIGITEK ELECTRONICS CO.,LTD. fn LIGITEK Property of Ligitek Only PART NO. LSIR3833 Page 1/4 Package Dimensions tf 5.0 56 tot 7 8.7 Lo | 15 | MAX 25.0MIN 00.5 || TYP Ls 4 2.54Typ 10MIN + - Note : 1.All dimension are in millimeter tolerance is +0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Features: 1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation. Descriptions: The LSIR3833 series are super-high efficiency Gallium Aluminum Arsenide infrared emitting diodes encapsulated in water clear plastic T-1 3/4 package individually Device Selection Guide:

LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only Absolute Maximum Ratings at Ta=25°C oe a 300PPS,1 ws Pulse Electrical Optical Characteristics (Aa=25°C ) ans [ss |e [vs | wer [rescore a senmteantnies | | 424 || a | ram roemtmonh |onw)em|eom | Seatwave | ax) || om | a norte |Tv) em | sownce | me Av [wevwomne fae] fe] [ow | Note : 1.The forward voltage data did not including +0.1V testing tolerance. 2. The radiant intensity data did not including +15% testing tolerance.

(he LIGITEK ELECTRONICS CO.,LTD. Le, LIGITEK Property of Ligitek Only PART NO. LSIR3833 Page3/4 Typical Electro-Optical Characteristics Curve SIR CHIP Fig.1 Forward Current vs. Rorward Voltage Fig.2 Relative Radiant Intensity vs. Wavelength 1000 > 1.0 q E 100 Lane 2 rs 5 10 S905 (3) sea 5 4 u ot 3 2 00 r _ 05 1.0 15 20 25 750 800 850 900 950 1000 1050 Forward Voltage(V) Wavelength(nm) Fig.3 Relative Radiant Power Fig.4 Relative Radiant Power vs. Forward DC Current vs. Forward Peak Current 10.0 10.0 & & Z< sc && as e ro So 1, nod a és a cae ge ge sS BS 2 2 0.4 0.1 1 10 100 10 100 1000 Iroc(mA) lrx(MA) Fig.5 Forward DC Voltage vs. Temperature Fig.6 Relative Radiant Power vs. Temperature < 1.2 oo 3.0 a. Zio 25 Oo a 2a 2 ¢ 20 ge a) £® io S215 an $s : Sa 3 © 3 © 10 os oN aE 09 23 z § 5 e 0.5 ie} = 0.8 «Zz 00 ge -40 -20 0 20 40 60 80 100 40 -20 0 20 40 60 80 100 Ambient Temperature[‘C ] Ambient Temperature[‘’C]

[a LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only PART NO. LSIR3833 Page 4/4 Reliability Test: Test Item Test Condition Description Reference Standard 1.Under Room Temperature This test is conducted for the purpose | MIL-STD-750: 1026 Operating Life Test 2.1f=20mA of detemining the resisance of a part MIL-STD-883: 1005 3.t=1000 hrs (-24hrs, +72hrs) in electrical and themal stressed. JIS C7021: B-1 The purpose of this is the resistance of High Temperature 1.Ta=105'C 45°C the device which is laid under ondition MIL-STD-883:1008 Storage Test 2.t=1000 hrs (-24hrs, +72hrs) —_| of hogh temperature for hours. JIS C 7021: B-10 The purpose of this is the resistance Low Temperature 1.Ta=-40°C+5°C of the device which is laid under JIS C 7021: B-12 Storage Test 2.t=1000 hrs (-24hrs, +72hrs) __| condition of low temperature for hours. : High Temperature 1Ta-65 C45 C The purpose of this test is the resistance | MIL-STD-202:103B High Humidity Test auaried eda of the device under tropical for hous. JIS C 7021: B-11 1.Ta=108'C 45°C 8-40'C45°C The purpose of this is the resistance of | MIL-STD-202: 107D Thermal Shock Test (10min) (10min) the device to sudden extreme changes. | MIL-STD-750: 1051 2.total 10 cycles in high and low temperature. MIL-STD-883: 1011 This test intended to determine the , pani ae thermal characteristic resistance MIL-STD-202: 210A Solder Resistance 1.T.Sol=260°C 25C of the device to sudden exposures MIL-STD-750: 2031 esi 2.Dwell time= 1041sec. at extreme changes in temperature JIS C 7021: At when soldering the lead wire. MIL-STD-202; 208D 7 1.T.Sol=230°C45'C This test intended to see soldering well | MIL-STD-750: 2026 Solderability Test 2.Dwell time=5!1sec performed or not. MIL-STD-883: 2003 JIS C 7021: A-2