LSE75240-PF LIGITEK | Alldatasheet
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DOC. NO : QW0905-LSE75240-PF REV. : A DATE : - 200723 - Jan. DATA SHEET RECTANGLE TYPE LED LAMPS LSE75240-PF Lead-Free Parts Pb LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
25.0MIN Directivity Radiation Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. -30° -60° 100%75% 60° 30° + - 1.0MIN 2.54TYP Package Dimensions PART NO. LSE75240-PFPage 1/5 4.6 □0.5 TYP 1.5MAX 2.8 2.6 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
Absolute Maximum Ratings at Ta=25 ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) mA80IFP Peak Forward Current Duty 1/10@10KHz Max. Forward voltage @ mA(V)COLOR Orange Diffused Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Emitted LSE75240-PF GaAsP/GaPOrange MATERIALPART NO Min.Lens 610451.72.6 Peak wave length λPnm Spectral halfwidth △λnm 20 Reverse Current @5V Power Dissipation Operating Temperature Storage Temperature Tstg Topr PD Ir -40 ~ +85 -40 ~ +100 Min. Typ. 4.51.8138 Viewing angle 2θ 1/2 (deg) Luminous intensity @10mA(mcd) mW μA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Symbol Forward Current Parameter IF SE Ratings UNIT mA Page 2/5LSE75240-PFPART NO.
Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Curve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 550 600 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20-40 4020080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 650 700750 SE CHIP Page3/5LSE75240-PFPART NO.
Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350 °C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/5
0 Preheat
25° 2°/sec max 10050 150 Time(sec) Temp(°C) 120° 260° 5°/sec max 260°C3sec Max
60 Seconds Max
Note:1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. LSE75240-PFPART NO.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 MIL-STD-202:103B JIS C 7021: B-11 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec (10min) (10min) 2.total 10 cycles 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. 1.Ta=65℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. This test intended to see soldering well performed or not. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. The purpose of this test is the resistance of the device under tropical for hours. Low Temperature Storage Test Test Item Operating Life Test High Temperature Storage Test Reliability Test: JIS C 7021: B-12 MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Reference Standard LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) 1.Ta=105℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=-40℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) Test Condition This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.
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