LSD451-24-XX

LSD451-24-XX LIGITEK | Alldatasheet

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DOC. NO : QW0905- REV. : A DATE : - 2005 SINGLE DIGIT LED DISPLAY (0.4 Inch) LSD451/24-XX DATA SHEET LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 17 - Dec. LSD451/24-XX

Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. Package Dimensions PART NO. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LSD451/24-XX Page1/7 5.1 2.54X6 =15.24 ψ1.4 3.5±0.5 18.7 PIN NO.1 LSD451/24-XX LIGITEK 10.1 ψ0.45 TYP. 7.62 9.8

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Internal Circuit Diagram PART NO. LSD4514-XX AF 711 1063 CBE D DPG AF BCDE DPG LSD4524-XX Page2/7LSD451/24-XX 8436101172 PIN5.9.12.13 NO PIN, PIN14 NC

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PIN NO. LSD4514-XX PIN NO. PART NO. Electrical Connection LSD4524-XX Anode G Anode A Common Cathode Anode F Common Anode NO PIN NO PIN Anode E Anode D NO PIN Anode DP Cathode A Cathode F Cathode G Cathode E Cathode D NO PIN Cathode DP 3/7PageLSD451/24-XX Anode C Cathode C Anode B1111 Cathode B

12 NO PIN 12 NO PIN

Reverse Current Per Any Chip Ir 10 μA Operating Temperature Storage Temperature LSD4514-XX LSD4524-XX PART NO Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25)℃ Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Common Cathode -25 ~ +85 -25 ~ +85 Material GaAsP/GaP Orange Emitted CHIP △λ (nm) λP (nm) common cathode or anode 63545 Tstg Topr Max. 2.61.72.1 Min. Typ. 1.352.35 Min. Typ. Electrical Vf(v)Iv(mcd) IV-M 2:1 PART NO. Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Forward Current Per Chip Absolute Maximum Ratings at Ta=25 ℃ Ratings LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Parameter PD IFP IF Symbol UNIT mA mA mW100 120 E Common Anode Page 4/7LSD451/24-XX

Vr=5VIr IV-M Luminous Intensity Matching Ratio Symbol Test Condition For Each Parameter Parameter Luminous Intensity Per Chip Peak Wavelength Forward Voltage Per Chip Spectral Line Half-Width Reverse Current Any Chip PART NO. mcdIv λP nm μA nm Unit Vfvolt If=10mA If=20mA If=20mA Test Condition If=20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page5/7LSD451/24-XX

Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Curve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 550 600 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20-40 4020080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 650 PART NO. 700750 E CHIP Page6/7LSD451/24-XX

The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. The purpose of this test is the resistance of the device under tropical for hous. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to see soldering well performed or not. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. 1.Ta=65 ℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs (10min) (10min) 2.total 10 cycles Solder Resistance Test High Temperature High Humidity Test Thermal Shock Test MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202:103B JIS C 7021: B-11 The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reliability Test: PART NO. 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Low Temperature Storage Test High Temperature Storage Test Operating Life Test Test ItemTest Condition JIS C 7021: B-12 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 MIL-STD-883:1008 JIS C 7021: B-10 Reference StandardDescription 7/7PageLSD451/24-XX