LSD4015-62V-XX LIGITEK | Alldatasheet
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DOC. NO : QW0905- REV. : A DATE : - 2006 DATA SHEET SINGLE DIGIT LED DISPLAY (4.0 Inch) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 16 - Feb. LSD4015/62V-XX
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. Package Dimensions PART NO. PIN NO.1 LIGITEK LSD4015/62V-XX LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 101.6 (4.0") 122.0 (4.803") 107.0 (4.213") 5.08X4=20.32 (0.8") Ø 0.8 TYP 7.3±0.5 ψ11.0(0.433") 90.0(3.543") LSD4015/62V-XX Page1/7 15.0 (0.591")
1,8 LSD40162V-XX BACD 6437 GEFDP 295 10 1,8 LSD40152V-XX BACD Internal Circuit Diagram PART NO. GEF DP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LSD4015/62V-XX Page2/7
7 Cathode A
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LSD40162V-XX Electrical Connection Anode D Common Cathode Anode C Anode E PIN NO. PART NO. PIN NO.LSD40152V-XX Cathode D Cathode C 4 Common Anode Cathode E 3/7PageLSD4015/62V-XX
Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Part Selection And Application Information(Ratings at 25)℃ LSD40162V-XX LSD40152V-XX PART NO GaP Green Material Emitted CHIP Electrical Max. 565308.410.4 6.8 (nm) λP (nm) Min. Typ. Vf(v) 2:118.031.0 IV-M Min. Typ. Iv(mcd) Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ PD Ir Tstg Topr IF Symbol IFP Absolute Maximum Ratings at Ta=25 ℃ Forward Current Per Chip Power Dissipation Per Chip Reverse Current Per Any Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Storage Temperature Operating Temperature Parameter mA30 -25 ~ +85 -25 ~ +85 100 120 mW μA mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only VG Ratings Page4/7 UNIT PART NO. Common Cathode Common Anode LSD4015/62V-XX
Test Condition For Each Parameter Luminous Intensity Per Chip Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio Peak Wavelength Forward Voltage Per Chip Parameter Test Condition IV-M Ir μA nm λp Iv Vf Symbol mcd nm volt Unit If=20mA Vr=5V If=20mA If=20mA If=20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 5/7Page PART NO.LSD4015/62V-XX
Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Cur ve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20-4040 20080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 VG CHIP 3.5 Page6/7 PART NO.LSD4015/62V-XX
Reliability Test: Test Item High Temperature Storage Test Low Temperature Storage Test Operating Life Test High Temperature High Humidity Test Thermal Shock Test Solder Resistance Test Solderability Test The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. (10min) (10min) 2.total 10 cycles MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 MIL-STD-883:1008 JIS C 7021: B-10 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11 1.Ta=-40℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=65℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs 1.Ta=105℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Test Condition The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. The purpose of this test is the resistance of the device under tropical for hours.
Description
This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Page7/7LMD5741/2BVG-XX PART NO.