LSD3E5-62-XX-PF

LSD3E5-62-XX-PF LIGITEK | Alldatasheet

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08 - Oct. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.39 Inch) DATA SHEET DOC. NO : QW0905- REV. : A DATE : - 2008 LSD3E5/62-XX-PF

5.08 (0.2") 9.76 (0.384") 11.0 (0.433") 9.9 (0.39") LSD3E5/62-XX-PF LIGITEK B A G2G1 J KHF LN M D E 10.0 (0.39") C ψ1.2(0.047") PIN NO.1 2.35X2=4.7 (0.185") 7.5(0.295") Ø 0.45 TYP 3.5±0.5 14.0 (0.551") 1 13 7.0 (0.276") Page1/8LSD3E5/62-XX-PF LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. Package Dimensions Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice.

K 8 7 3 412 2151411 5 6 9 BA 161310 Page2/8 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Internal Circuit Diagram PART NO.LSD3E5/62-XX-PF DCB NDPLMJKG2G1FEH 6 2 7 3 41214 1511 5 9 LSD3E62-XX-PF A 1316

PIN NO. Cathode H Cathode G1 Common Anode Cathode F Electrical Connection LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only

7 Cathode E

PART NO.LSD3E5/62-XX-PF

2 Cathode H

11 Cathode L

LSD3E62-XX-PFPIN NO.

G Ratings Symbol LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only mA mW μA 120 100 IFP PD Ir -40 ~ +85 -40 ~ +100Tstg Topr 30 mAIF Parameter Absolute Maximum Ratings at Ta=25 ℃ Forward Current Per Chip Power Dissipation Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Storage Temperature Operating Temperature Reverse Current Per Any Chip Iv(mcd) Min. Typ. IV-M 1.751.02:1 Vf(v) Max.Typ. (nm) Min.Emitted common cathode or anode λP (nm)

1.82.4301.5565 Green

Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Part Selection And Application Information(Ratings at 25)℃ PART NO.LSD3E5/62-XX-PF Common Anode LSD3E62-XX-PF

If=20mA Test Condition volt Unit Vf SymbolParameter LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only If=20mA If=10mA Vr=5V If=20mA mcd nm Iv λP μA IV-M Ir nm△λ Reverse Current Any Chip Spectral Line Half-Width Forward Voltage Per Chip Peak Wavelength Luminous Intensity Per Chip Test Condition For Each Parameter Luminous Intensity Matching Ratio PART NO.LSD3E5/62-XX-PF

Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Curve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Page Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20-40 4020080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 G CHIP Fig.6 Directive Radiation 6/8 PART NO.LSD3E5/62-XX-PF

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Time(sec) 150 260°C3sec Max 5°/sec max 100 2°/sec max Preheat 50 260° Temp(°C) 120° 25°

60 Seconds Max

Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One time only) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. LSD3E5/62-XX-PF PART NO.

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202:103B JIS C 7021: B-11 JIS C 7021: B-12 MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Test ConditionTest Item Reliability Test: High Temperature Storage Test Low Temperature Storage Test 1.Ta=65℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs High Temperature High Humidity Test Thermal Shock Test Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) (10min) (10min) 2.total 10 cycles 1.Ta=-40℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=105℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1secSolderability Test MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. PART NO.LSD3E5/62-XX-PF