LMD6711-2ASE-XX LIGITEK | Alldatasheet

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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOT MATRIX LED DISPLAY(1.2Inch) LMD6711/2ASE-XX LMD6711/2ASE-XX DATA SHEET 20 - Jan. DOC. NO : QW0905- REV. : D DATE : - 2006

1/7PageLMD6711/2ASE-XX PART NO. Package Dimensions LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 3.8±0.5 23.75(0.935) 34.0 (1.339") 2.75(0.108") 3.25 (0.128") ψ0.45 TYP 15.24(0.6") 27.0 (1.063") PIN NO.1 LMD6711/2ASE-XX LIGITEK 2.54X6 =15.24 (0.6")

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LMD6711/2ASE-XX Internal Circuit Diagram PART NO. 7 7 LMD6711ASE-XX 2 2 ROW COLUMN 1 PIN 8 2 43 109 11 COLUMN PIN ROW LMD6712ASE-XX 1 2 1110 3 4

LMD6712ASE-XXPIN NO. 12. 12. 11.11. 3/7Page Anode Row 1 Anode Row 2 Anode Row 3 LMD6711ASE-XX LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD6711/2ASE-XX Electrical Connection PIN NO. 10. 8. Cathode Column 8 10. Anode Row 4 Anode Row 5 Anode Row 6 Nc No Pin 13. 14. 13. 14. Cathode Column 9 Cathode Column 10 Cathode Column 11 Cathode Column 12 Cathode Row 1 Cathode Row 2 Cathode Row 3 Cathode Row 4 Cathode Row 7 Cathode Row 6 Cathode Row 5 Nc No Pin Anode Column 8 Anode Column 9 Anode Column 10 Anode Column 11 Anode Column 12

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only mA mA mW 10 μA IF IFP PD Tstg oprT Ir -25 ~ +85 -25 ~ +85 PART NO. LMD6711/2ASE-XX Storage Temperature Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Operating Temperature Reverse Current Per Any Chip Forward Current Per Chip Parameter Absolute Maximum Ratings at Ta=25 ℃ IV-MVf(v) Electrical Iv(mcd) (nm) λP (nm) CHIP

45610 GaAsP/GaP Orange

Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Part Selection And Application Information(Ratings at 25)℃

If=20mA If=10mA Vr=5V If=20mA If=20mA UnitSymbolParameter LMD6711/2ASE-XX PART NO. Test Condition For Each Parameter mcd volt μA nm nm Vf Iv Ir λp IV-M Spectral Line Half-Width Peak Wavelength Forward Voltage Per Chip Reverse Current Any Chip Luminous Intensity Matching Ratio Luminous Intensity Per Chip Test Condition LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1. 素子規格 (1)表示素子 ----LED (2)表示色 ----橘紅色 (3)輝度 ----250cd (周圍照度 0 Lux 時) (4)壽命 ----輝度半減期 50.000 Hr (5)光亮度 ----無規定 (1dot 內光亮平均) 2. 表示器規格 (1)輝度 ----表示器內及同一LOT內之表示器,輝度無規定. (鄰接DOT之輝度差 50% 以下) (2)光亮度 ----無規定 器具規格

Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Curve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 550 600 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20-40 4020080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 650 700750 SE CHIP Page6/7 PART NO.LMD6711/2ASE-XX

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only

Description

JIS C 7021: B-12 MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202:103B JIS C 7021: B-11 1.Ta=-40℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=65℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. The purpose of this test is the resistance of the device under tropical for hours. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Test Item PART NO. Operating Life Test Low Temperature Storage Test High Temperature Storage Test High Temperature High Humidity Test Thermal Shock Test LMD6711/2ASE-XX Reliability Test: MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not.Solderability Test Solder Resistance Test This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1