LMD4411-2AEG-XX LIGITEK | Alldatasheet
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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOT MATRIX DIGIT LED DISPLAY (1.85Inch) LMD4411/2AEGR-XX DATA SHEET DOC. NO : QW0905- REV. : A DATE : - 200524 - Jun. LMD4411/2AEGR-XX
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 5.08X7=35.56 (1.4") 8.7 (0.34")50.6( 2" ) ψ9.0(0.354") 50.6 ( 2" ) 12.7X3=38.1 (1.5") LMD4411/2AEGR-XX LIGITEK ψ 0.8 TYP 5.6±0.5 12.7X3 =38.1 (1.5") 25.4 (1.0") PIN NO.1
LMD4411/2AEGR-XX 2/8 PART NO. Internal Circuit Diagram LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3 14 4 16 1 10 PIN COLUMN ROW 1 45 6 LMD4411AEGR-XX 7 8 GREEN RED 164 133 122 ROW COLUMN PIN 1 23 4 6 LMD4412AEGR-XX
PIN NO. PART NO. PIN NO. Cathode Column 1 (Red) Electrical Connection LMD4411AEGR-XX LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LMD4412AEGR-XX
5 Anode Column 3 (Red)
Anode Row 1(Green) Cathode Column 4 (Green) Anode Row 1(Red) Cathode Column 4 (Red) Cathode Column 3 (Green) Cathode Column 2 (Red) Cathode Column 2 (Green) Cathode Column 3 (Red ) 3 (Green) Cathode Column 1 (Green)2
1 Anode Column 1 (Red)
2 Anode Column 1 (Green)
3 Anode Column 2 (Red)
4 Anode Column 2 (Green)
Anode Row 2(Red) Anode Row 2(Green) Anode Row 3(Red) Anode Row 3(Green) Anode Row 4(Red) Anode Row 4(Green) 16 Cathode Row 4(Green)
15 Cathode Row 4(Red)
14 Cathode Row 3(Green)
13 Cathode Row 3(Red)
12 Cathode Row 2(Green)
11 Cathode Row 2(Red)
10 Cathode Row 1(Green)
Cathode Row 1(Red) Anode Column 4 (Red) Anode Column 4 (Green)
E LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. Absolute Maximum Ratings at Ta=25 ℃ Parameter mA mW μA Iv(mcd) 148.0 Typ.Min. Vf(v) 2.62.1 Typ. Max. Electrical 2:1 IV-M IFP PD Topr Tstg Ir (nm) λP (nm) 640Red EmittedMaterial GaAsP/GaP CHIP common cathode or anode Common Cathode 1.7 Min. -25 ~ +85 -25 ~ +85 100 120 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LMD4411AEGR-XX Part Selection And Application Information(Ratings at 25 )℃ Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ PART NO Operating Temperature Storage Temperature Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Reverse Current Per Any Chip Power Dissipation Per Chip Forward Current Per Chip IF 30 mA GaP Green 565 30 1.7 2.1 2.6 15 25 G 120 100 LMD4412AEGR-XX GaAsP/GaP GaP Red Green 640 565 1.745 30 1.7 2.62.1 2.1 2.6 148.0 15 25
If=20mA Test Condition Vf SymbolParameter LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only mcd nm μA nm Vr=5V If=20mA If=10mA If=20mA Iv λp Ir IV-M Test Condition For Each Parameter Luminous Intensity Matching Ratio PART NO. Forward Voltage Per Chip Reverse Current Any Chip Spectral Line Half-Width Luminous Intensity Per Chip Peak Wavelength
1.0 Relative Intensity@20mA 0.0 0.5 Wavelength (nm) 550 600 650 Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Fig.3 Forward Voltage vs. Temperature Forward Voltage@20mA Normalize @25℃ -20-40 0.8 1.0 0.9 1.1 1.2 0.5 Relative Intensity@20mA Normalize @25℃ -20 Ambient Temperature(℃) 806040200- 4 0 100 0.0 806002 0 4 0 1 0 0 Fig.4 Relative Intensity vs. Temperature 2.5 1.5 1.0 2.0 3.0 Page 6/8 Fig.1 Forward current vs. Forward Voltage Typical Electro-Optical Characteristics Curve 100 Forward Current(mA)0.1 1.0 1.0 1000 E CHIP Relative Intensity Normalize @20mA 0.5 Forward Voltage(V) 0.0 1.5 1.0 2.0 2.5 Forward Current(mA) 10 100 1000 Fig.2 Relative Intensity vs. Forward Current 3.0 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD4411/2AEGR-XX 700 750
Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Curve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Page 7/8 Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -20 0 20 40 60 1.0 1.1 1.2 500 550 600 650 0.0 0.5 1.0 2.0 3.0 4.0 5.0 80 100 0.8 0.9 -20-40 402008 0 1 0 0 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 G CHIP PART NO. LMD4411/2AEGR-XX
StandardDescriptionTest Condition PART NO. Test Item Operating Life Test Reliability Test: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only JIS C 7021: B-12 MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202:103B JIS C 7021: B-11 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, + 72hrs) 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, + 72hrs) (10min) (10min) 2.total 10 cycles 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. Low Temperature Storage Test High Temperature Storage Test Thermal Shock Test High Temperature High Humidity Test Solderability Test Solder Resistance Test This test intended to see soldering well performed or not. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. The purpose of this test is the resistance of the device under tropical for hous. The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, + 72hrs) MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1