LDGM3333Z-S166

LDGM3333Z-S166 LIGITEK | Alldatasheet

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DOC. NO : QW0905- REV. : DATE : DATA SHEET ROUND TYPE LED LAMPS LDGM3333Z/S166 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LDGM3333Z/S166 20 - Apr. - 2007 A Lead-Free Parts Pb

Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Package Dimensions LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDGM3333Z/S166 Page 1/5 8.6 5.0 5.9 1.5MAX □0.5 TYP 2.9±0.3 2.54TYP 7.6 + - 100%50%75% 25% -60° -30° 75%25%0 50%100% 30° 60° Zener DGM

Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Absolute Maximum Ratings at Ta=25 ℃ IFP PD IF Tstg Topr ESD Symbol Typical Electrical & Optical Characteristics (Ta=25 ℃) Power Dissipation Reverse Current @5V Electrostatic Discharge( * ) Storage Temperature Operating Temperature Parameter Peak Forward Current Duty 1/10@10KHz Forward Current 120 -30 ~ +100 -20 ~ +80 Ir 8000 Ratings DGM 100 mW V μA mA mA UNIT LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/5 Viewing angle 2θ 1/2 (deg) Min. 2700 Typ. 3.5 Forward voltage @ mA(V) Max. 4.0 Peak wave length λPnm 518 Spectral halfwidth △λnm Typ. Luminous intensity @20mA(mcd) 5000 Emitted Green PART NO LDGM3333Z/S166 MATERIAL InGaN/GaN Lens COLOR Water Clear Dominant wave length λDnm 525 Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. LDGM3333Z/S166PART NO.

Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Curve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 450550600 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20-40 4020080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 500 DGM CHIP 3/5PageLDGM3333Z/S166PART NO.

260°C3sec Max 5°/sec max 260° 120° Temp(°C) Time(sec) 15050 100 2°/sec max25° Preheat0 Page 4/5 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350 °C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Note:1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above.

60 Seconds Max

LDGM3333Z/S166PART NO.

This test intended to see soldering well performed or not.Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 The purpose of this test is the resistance of the device under tropical for hours. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. High Temperature High Humidity Test Thermal Shock Test (10min) (10min) 2.total 10 cycles 1.Ta=65 ℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202:103B JIS C 7021: B-11 Reference StandardDescriptionTest ItemTest Condition The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) MIL-STD-883:1008 JIS C 7021: B-10 JIS C 7021: B-12 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Reliability Test: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/5LDGM3333Z/S166PART NO.