LBD336B-XX

LBD336B-XX LIGITEK | Alldatasheet

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20 - Aug. DOC. NO : QW0905- REV. : A DATE : - 2008 LBD336B-XX LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LBD336B-XX DATA SHEET

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. PIN NO. 1 LBD336B -XX LIGITEK 33.0(1.30") 4.0±0.5 11.0 (0.43") E Ø 0.45 TYP 6.4 (0.25") Y 2.54*6=15.24(0.6") YG Package Dimensions LBD336B-XX 11.0 (0.43") 7.62 (0.3") B 1/10Page Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. .3.Film:temperature-resistant≦100°C.

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only da 1 14 2 b c PART NO. Internal Circuit Diagram LBD336B-XX 9 10 A BC 1353 12 11 7 D FEDP G LBD336B-XX

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Cathode b14. Electrical Connection 12. 13. 10. 11. PART NO. PIN NO. LBD336B-XX Cathode D Cathode A Cathode B Cathode G Cathode DP Common Anode Cathode E Cathode F NC LBD336B-XX Cathode a Cathode c Cathode d Cathode C 3/10Page

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Vf(v) Part Selection And Application Information(Ratings at 25)℃ Material GaAsP/GaP Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LBD336B-XX PART NO Common Anode Orange Emitted Yellow CHIP common cathode or anode 45635 1.7 1.7 (nm) λP (nm) 585 Min. 1.7 PART NO. LBD336B -XX Parameter Forward Current Per Chip Absolute Maximum Ratings at Ta=25 ℃ Power Dissipation Per Chip Operating Temperature Storage Temperature Reverse Current Per Any Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Topr Tstg Ir PD 60 -25 ~ +85 -25 ~ +85 100 IF IFP Symbol Ratings Y 120 E 2.1 2.1 --- --- --- --- 2:1 Iv(mcd) Typ. 2.1 Min. --- Electrical IV-M Typ --- 100 μA mW 120 G mA mA UNIT Page 4/10 SBI 120 Electrostatic Discharge( * ) ESD--- V Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. 500 Max. 2.6 2.6 2.6 InGaN/SiC Blue 43065 ---3.84.7 3.055.0 GaP Green 56530 GaAsP/GaP λD (nm) --- --- --- 465

Luminous Intensity Matching Ratio Peak Wavelength IV-M Ir λP VfIf=10mA Vr=5V If=20mA If=20mA μA nm nm volt PART NO. LBD336B-XX Test Condition For Each Parameter LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Parameter Symbol Test ConditionUnit 5/10Page Dominant Wavelength λD nmIf=20mA Luminous Intensity Per Chip Iv mcd If=10mA Forward Voltage Per Chip VfvoltIf=20mA

3.0 2.5 1.5 1.0 0.5 0.0 2.0 Fig.4 Relative Intensity vs. Temperature 1.0 Relative Intensity@20mA 550 Wavelength (nm) 500 0.0 0.5 600650700 Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Fig.3 Forward Voltage vs. Temperature Forward Voltage@20mA Normalize @25℃ -40 0.8 -20 1.0 0.9 1.1 1.2 Relative Intensity@20mA Normalize @25℃ 4020060100 80 Ambient Temperature(℃) -40-20 02060 40100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Fig.2 Relative Intensity vs. Forward Current Typical Electro-Optical Characteristics Curve 2.0 Fig.1 Forward current vs. Forward Voltage Forward Voltage(V) 100 Forward Current(mA) 1.0 0.1 1.0 Y CHIP 1000 Relative Intensity Normalize @20mA 3.04.05.0 6/10Page Forward Current(mA) 1.0101001000 PART NO. LBD336B-XX

Typical Electro-Optical Characteristics Curve Page LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 3.0 2.5 1.5 1.0 0.5 0.0 2.0 Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA 600 Wavelength (nm) 550 0.0 0.5 650700750 Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Fig.3 Forward Voltage vs. Temperature Forward Voltage@20mA Normalize @25℃ 1.0 -40 0.8 -20 1.0 0.9 1.1 1.2 Relative Intensity@20mA Normalize @25℃ 20060 40100 80 10020 Ambient Temperature(℃) -20-40 060 4080 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Fig.2 Relative Intensity vs. Forward Current 2.0 Fig.1 Forward current vs. Forward Voltage Forward Voltage(V) 100 Forward Current(mA) 1.0 0.1 1.0 E CHIP 1000 Relative Intensity Normalize @20mA 3.04.05.01000 Forward Current(mA) 1.010100 PART NO. LBD336B-XX

Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA 1.0 0.1 1.0 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20-40 4020080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 G CHIP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Typical Electro-Optical Characteristics Curve Page8/10 PART NO. LBD336B-XX

Relative Intensity(%) Forward Current (mA DC) Ambient Temperature (℃) 5075100 Lead Temperature (℃)Forward Current (mA DC) Fig.5 Forward Current vs. Ambient Temperature 301520 25 4035 45 100 Relative Intensity 0 25 75 100 SBI CHIP Relative Intensity(%) Forward Current(mA DC) Fig.3 Relative Intensity vs. Forward Current 125 435 Forward Voltage(V) Fig.4 Relative Intensity vs. Lead Temperature 530 Wavelength (nm) 430380 480 680 580 630 Fig.1 Forward current vs. Forward Voltage 0.5 Fig.2 Relative Intensity vs. Wavelength 1.0 Typical Electro-Optical Characteristics Curve Page9/10 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD336B-XX

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202:103B JIS C 7021: B-11 JIS C 7021: B-12 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 (10min) (10min) 2.total 10 cycles 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec 1.Ta=-40℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=65℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Solderability Test Solder Resistance Test Low Temperature Storage Test Thermal Shock Test High Temperature High Humidity Test Operating Life Test High Temperature Storage Test This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. This test intended to see soldering well performed or not. This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. The purpose of this test is the resistance of the device under tropical for hours. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. Reliability Test: Test Item Test Condition Description Reference Standard 10/10Page PART NO. LBD336B-XX