LBD172A-XX LIGITEK | Alldatasheet

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a LIGITEK ELECTRONICS CO.,LTD. fi LIGITEK Property of Ligitek Only TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616 BAR DIGIT LED DISPLAY LBD172A-XX DOC.NO : QW0905-LBD172A-XX REV. : A DATE : 21-Jul - 2004

fe LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only Package Dimensions 10.2 R Y G “pen a q ee Gea 13.0 9.0 LBD172A-10 LIGITEK o 0.6__|_ 3.0+0.5 TYP | | | 2.64x5=12.7 (0.5") Note : 1.All dimension are in millimeters and (Inch) tolerance is +0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.

&, LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only Internal Circuit Diagram LBD172A-XX 1 2 6 aE DI EF : 3 4 5 R Y G

LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only Electrical Connection 8 ates ie

fe LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only PART NO. LBD172A-XX Page 4/9 Absolute Maximum Ratings at Ta=25°C Parameter Symbol UNIT Peak Forward Current PerChip ey mo eeims pase me) mm Electrostatic Discharge 2000 Operating Temperature -40 ~ +85 Storage Temperature -40 ~ +85 Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260°C Part Selection And Application Information(Ratings at 25°C ) PART NO cathode | (tb | A2 Na ore ‘i [i [6 mee oe | Anode Note : 1.The forward voltage data did not including +0.1V testing tolerance. 2. The luminous intensity data did not including +15% testing tolerance.

LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only Test Condition For Each Parameter ‘euronews | rm || “unin hanvinimaio

[i LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only PART NO. LBD172A-XX Page 6/9 Typical Electro-Optical Characteristics Curve URF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 _ TT... i G x co ee 1.0 15 2.0 25 3.0 1.0 10 100 1000 Forward Voltage(V) Forward Current(mA) Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 12 3.0 ao 1 go of || 1 1 tt | oe =a eS es SEE ee 7 BE 0 ef .e| | | Pr] | aan s2 “FTC 40-20 0 20 40 6 9 10 ~ 40-20 -0 20 40 60 80 100 Ambient Temperature(‘C ) Ambient Temperature(‘C ) Fig.5 Relative Intensity vs. Wavelength < 1.0 q g @ 0.5 & 0 550 600 650 700 Wavelength (nm)

[Ac LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only PART NO. LBD172A-XX Page7/9 Typical Electro-Optical Characteristics Curve HYS CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 = e S 20 iS) gn = & § 0.5 eo, io ee EO 1.0 15 2.0 25 3.0 1.0 10 100 1000 Forward Voltage(V) Forward Current(mA) Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 12 3.0 < < s 7 ae * gop | [ TT CT Nn N gs” se osf| | [Et] | Zz eZ Be os o-oo bd tT ttt | 40-20 0 20 40 60 80 100 40-20 0 20 40 60 80 100 Ambient Temperature(‘C ) Ambient Temperature(‘C ) Fig.5 Relative Intensity vs. Wavelength 1.0 q Py o 05 \\ oO Zs SG 0.0 500 550 600 650 Wavelength (nm)

[Ac LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only PART NO. LBD172A-XX Page8/9 Typical Electro-Optical Characteristics Curve UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 ee € 400 Fo of el | ae 28 FUL CUM oO oO Eos = 0 Eamets nad ass Forward Voltage(V) Forward Current(mA) Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 12 3.0 : ee Sy C N Bo oe s* obs LT it | 40-20 0 20 40 60 80 100 40-20 0 20 40 60 80 100 Ambient Temperature(‘C ) Ambient Temperature(‘C ) Fig.5 Relative Intensity vs. Wavelength 1.0 q Py 2 05 oO Zs @ 00 500 550 600 650 Wavelength (nm)

[te LIGITEK ELECTRONICS CO.,LTD. LIGITEK Property of Ligitek Only PART NO. LBD172A-XX Page 9/9 Reliability Test: Test Item Test Condition Description Reference Standard 4.Under Room Temperature This test is conducted for the purpose MIL-STD-750: 1026 Operating Life Test 2.1f-10mA of detemining the resisance of a part MIL-STD-883: 1005 3.t=1000 hrs (-24hrs, +72hrs) in electrical and themal stressed. JIS C 7021: B-1 The purpose of this is the resistance of High Temperature 1.Ta=105°C45°C the device which is laid under ondition MIL-STD-883:1008 Storage Test 2.t=1000 hrs (-24hrs, +72hrs) of hogh temperature for hours. JIS C 7021: B-10 The purpose of this is the resistance Low Temperature 1.Ta=-40°C45°C of the device which is laid under JIS C7021: Be12 Storage Test 2.1=1000 hrs (-24hrs, +72hrs) condition of low temperature for hours. o High Temperature aveh cats % The purpose of this test is the resistance | MIL-STD-202:103B igh Humidity Ts -RH=90%~95% i i . :Be High Humidity Test 3 t-240hrs+2hrs of the device under tropical for hous. JIS C 7021: B-11 1.Ta=105°C45C &-40°C45°C The purpose of this is the resistance of || MIL-STD-202: 107D Thermal Shock Test (10min) (10min) the device to sudden extreme changes MIL-STD-750: 1051 2.total 10 cycles in high and low temperature. MIL-STD-883: 1011 This test intended to determine the . men +R thermal characteristic resistance MIL-STD-202: 210A Solder Resistance J TS0l8260C25.C of the device to sudden exposures MIL-STD-750: 2031 est 2.Dwell time= 10#1sec. at extreme changes in temperature JIS C 7021: A-1 when soldering the lead wire. MIL-STD-202: 208D - 4.T.Sol=230°C45°C This test intended to see soldering well | MIL-STD-750: 2026 Solderability Test 2.Dwell time=5#1sec performed or not. MIL-STD-883: 2003 JIS C 7021: A-2