LBD1311URFUGHYS-XX-RP55 LIGITEK | Alldatasheet
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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOC. NO : QW0905- REV. : B DATE : DATA SHEET LBD1311URFUGHYS-XX/RP55 LBD1311URFUGHYS-XX/RP55 BAR GRAPM LED DISPLAY 19 - Oct. - 2006
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Package Dimensions PART NO.LBD1311URFUGHYS-XX/RP55Page1/9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 10.5 26.0 C1F3 E3E2 22.4 Ø 0.45 TYP 2.54X11 =27.9436.018.5 5.5±0.5 LBD1311URFUGHYS-XX/RP55 LIGITEK PIN NO.1 A3A2A1 B2B1
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LBD1311URFUGHYS-XX/RP55 Internal Circuit Diagram PART NO. Page2/9 F3F2 1615 F1E2 E3D3D2 E1 C3C1 C2 2322216 7108 9 5 1311 12 URF HYSUG 191817 B1 B2 B3 A1 A2 A3
PART NO. Electrical Connection LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PIN NO.1 LBD1311URFUGHYS-XX/RP55 LBD1311URFUGHYS-XX/RP55 Page3/9 Anode D2 Anode D3 Anode C3 Anode C2 Anode C1 Anode B1 Anode E1 Anode D1 Anode E3 Anode E2 Common Cathode C1,C2,C3 Common Cathode D1,D2,D3 Common Cathode E1,E2,E3 Anode F1 Anode F2 Anode F3 Common Cathode F1,F2,F3 Common Cathode A1,A2,A3 Anode A1 Anode A2 Anode A3 Anode B2 Anode B3 Common Cathode B1,B2,B3
λd VF Iv-m Δλ Iv RED 120 130 SYMBOL λd Δλ VF Iv-m Solder Temperature 1/16 inch Below Seating Plane for 3 Seconds at 260℃ ELECTRICAL /OPTICAL CHARACTERISTICS AT T A=25℃ SYMBOL Peak Forward Current Per Die (1/10 Duty Cycle,0.1ms Pulse Width) Reverse Current Per Die Dominant Wavelength Spectral Line Half-Width Forward Voltage Per Die Luminous Intensity Matching Ratio IR Average Luminous Intensity Spectral Line Half-Width Dominant Wavelength Forward Voltage Per Die Reverse Current Per Die Luminous Intensity Matching Ratio PARAMETER Average Luminous Intensity UG(A3,B3,C3,D3,E3) IR Iv Reverse Voltage Per Die Storage Temperature Range RED(A1,B1,C1,D1,E1) PARAMETER Operation Temperature Range Power Dissipation Per Die PARAMETER IF=10mA1322 μA nm nm20 587 1.91.7 2.8 2:1 IF=20mA VR=5V IF=20mA IF=20mA IF=10mA V mcd nm nm μA UNIT mcd 2:1 TYP.MIN.MAX. 630 1.81.5 2.4 IF=10mA TEST CONDITION IF=10mA IF=20mA IF=20mA IF=20mA VR=5V V -25 to +85℃℃ -25 to +85℃℃ UNITTYP.MIN.MAX. TEST CONDITION MAXIMUM RATING GREEN YELLOW mA mW UNIT LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Electrostatic Discharge( * ) 2000 PART NO.LBD1311URFUGHYS-XX/RP55 Page 4/9 Absolute Maximum Ratings at Ta=25 ℃ Forward Current Per Chip V mA50 3030 Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded.
Luminous Intensity Matching Ratio HYS(F1,F2,F3) Average Luminous Intensity Spectral Line Half-Width Dominant Wavelength PARAMETERTEST CONDITION IF=10mA IF=20mA IF=20mA VR=5V IF=20mA IF=20mA 1.7 V2.8VF 1.9 IR Iv-m μA10 2:1 TYP.SYMBOL Iv λd Δλ 108 180 587 MIN.UNIT mcd nm nm MAX. Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only ELECTRICAL /OPTICAL CHARACTERISTICS AT T A=25℃ PART NO.LBD1311URFUGHYS-XX/RP55 Page5/9 SYMBOL YELLOW(A2,B2,C2,D2,E2) Forward Voltage Per Die Reverse Current Per Die Luminous Intensity Matching Ratio Average Luminous Intensity Spectral Line Half-Width Dominant Wavelength Iv-m VF IR PARAMETER Iv Δλ λd TEST CONDITION 1.71.9 2:1 V μA 2.8 MAX. 3018 587 MIN.TYP. mcd nm nm UNIT IF=10mA VR=5V IF=20mA IF=10mA IF=20mA IF=20mA
Relative Intensity@20mA Normalize@25℃ Forward Voltage@20mA Normalize @25℃ Ambient Temperature(℃) Ambient Temperature(℃) 0.8 0.9 -40-2020 -06080100 -40 0.5 1.0 -20-060 4080100 Fig.4 Relative Intensity vs. Temperature Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 3.51000 Fig.3 Forward Voltage vs. Temperature Forward Voltage(V) 1.1 1.0 1.2 100 0.1 1.0 Forward Current(mA) 1.51.02.0 3.0 2.0 1.5 2.5 Relative Intensity Normalize @20mA 2.53.0 1.5 1.0 0.5 1.0 2.5 2.0 3.0 Fig.1 Forward current vs. Forward Voltage Typical Electro-Optical Characteristics Curve URF CHIP PART NO. LBD1311URFUGHYS-XX/RP55 1001000 Page6/9 650700550 600 Wavelength (nm) Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 Relative Intensity@20mA
Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Ambient Temperature(℃) 0.8 -40 0.9 -200 Ambient Temperature(℃) 10060402080 1.0 0.0 0.5 -40-20 8002060 40100 LBD1311URFUGHYS-XX/RP55 Typical Electro-Optical Characteristics Curve Fig.1 Forward current vs. Forward Voltage Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1000 1.2 1.1 1.0 Forward Current(mA) 0.1 1.0 1.0 2.0 100 UG CHIP PART NO. 3.0 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 2.5 2.0 1.5 4.03.05.0 1.0 Relative Intensity Normalize @20mA 0.5 0.0 1.0 2.5 2.0 1.5 101001000 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Fig.2 Relative Intensity vs. Forward Current Page7/9 Fig.5 Relative Intensity vs. Wavelength 600 Wavelength (nm) Relative Intensity@20mA 0.0 500 550 0.5 1.0 650
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Relative Intensity Normalize @20mA Typical Electro-Optical Characteristics Curve Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Wavelength (nm) 0.9 0.8 Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA Ambient Temperature(℃) -40-2020 06080100 1000 1.2 1.1 1.0 0.1 Fig.3 Forward Voltage vs. Temperature Forward Current(mA) 1.0 100 Forward Voltage(V) PART NO. HYS CHIP Fig.1 Forward current vs. Forward Voltage LBD1311URFUGHYS-XX/RP55 Ambient Temperature(℃) 0.0 -40 1.0 0.5 -20 060 4080100 3.0 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 1.5 2.0 3.0 2.5 1.0 0.0 1.0 0.5 2.0 1.5 2.5 1001000 Fig.2 Relative Intensity vs. Forward Current Page 550500 0.0 0.5 600 650 1.0
PART NO. Test Item Operating Life Test High Temperature Storage Test Low Temperature Storage Test Thermal Shock Test High Temperature High Humidity Test Reliability Test: Solder Resistance Test Solderability Test This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. Reference Standard MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 1.Ta=-40℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=65℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs (10min) (10min) 2.total 10 cycles 1.Ta=105℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. The purpose of this test is the resistance of the device under tropical for hours. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. LBD1311URFUGHYS-XX/RP55 Test Condition Description Page9/9