LBD101-2-3H3Y4G-XX-PF LIGITEK | Alldatasheet
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DOC. NO : QW0905- REV. : A DATE : - 200621 - Jun. LBD101/2/3H3Y4G-XX-PF DATA SHEET LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Lead-Free Parts Pb
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LBD101/2/3H3Y4G-XX-PF Package Dimensions PART NO. Page1/10 22.4(0.882") 25.3(0.996") PIN NO.1 ORIENTATION MARK 5.0 (0.197") 1.75(0.069") HHHY YY GG 6.0±0.5 LBD101/2/3H3Y4G-XX-PF LIGITEK 8.0(0.315") 10.1 (0.398") 7.6 (0.299") GG ψ0.45 TYP
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1115171816 131412 2/10Page PART NO.LBD101/2/3H3Y4G-XX-PF
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Cathode 9. 10. Cathode Cathode Cathode Cathode Cathode Cathode 19.Anode Anode20. Anode Anode Anode Anode Anode 16. 18. 17. 15. 14. LBD102/3H3Y4G-XX-PFPIN NO. Cathode Cathode Cathode 10. Anode Anode Anode Anode Anode Anode Anode Anode 11. 13. 12. Cathode Cathode Cathode Cathode Cathode 18. 20. 19. 17. 16. LBD101/3H34G-XX-PFPIN NO. Anode Anode Anode Anode Anode Electrical Connection Cathode Cathode Cathode Cathode Cathode 13. 14. 15. 12. 11. 3/10 PART NO.LBD101/2/3H3Y4G-XX-PF
Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Part Selection And Application Information(Ratings at 25)℃ PART NO (nm) λP (nm) common cathode or anode Common Anode Common Cathode GaP Green GaAsP/GaP Material Yellow Emitted 565 585 CHIP IV-MVf(v)Iv(mcd) 1.75 2.35 Min. 2.11.72.6 2.1 Typ. 1.7 Min. 2.6 Max. 2:1 3.05 3.05 Typ. Electrical Storage Temperature Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Operating Temperature Reverse Current Per Any Chip Forward Current Per Chip Parameter Absolute Maximum Ratings at Ta=25 ℃ HY Tstg oprT Ir 10 80IFP PD 60 IF 20 -25 ~ +85 -25 ~ +85 μA mA mW mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Symbol Ratings UNIT Page4/10 G 120 100 PART NO.LBD101/2/3H3Y4G-XX-PF LBD101/3H3Y4G-XX-PF
μA nm nm LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Parameter Spectral Line Half-Width Forward Voltage Per Chip Reverse Current Any Chip Luminous Intensity Matching Ratio Luminous Intensity Per Chip Peak Wavelength Ir IV-M λp Iv Vf Test Condition For Each Parameter Symbol Vr=5V If=20mA If=10mA If=20mA If=20mA Test Condition Page5/10 PART NO.LBD101/2/3H3Y4G-XX-PF
1.5 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Ambient Temperature(℃) 1000900800700600 Wavelength (nm) Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA 0.0 0.5 1.0 0.8 -40 0.9 -20020406080100-40 0.0 1.0 0.5 -20 804020060100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.1 1.0 1.2 Forward Current(mA) 0.1 1.0 1.0 100 1000 2.03.0 2.0 3.0 2.5 Relative Intensity Normalize @20mA 4.05.01.0 0.0 0.5 1.0 2.0 1.5 3.0 2.5 Typical Electro-Optical Characteristics Curve Fig.1 Forward current vs. Forward Voltage H CHIP 101001000 Page6/10 PART NO.LBD101/2/3H3Y4G-XX-PF
3.0 2.5 1.5 1.0 0.5 0.0 2.0 Fig.4 Relative Intensity vs. Temperature 1.0 Relative Intensity@20mA 550 Wavelength (nm) 500 0.0 0.5 600650700 Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Fig.3 Forward Voltage vs. Temperature Forward Voltage@20mA Normalize @25℃ -40 0.8 -20 1.0 0.9 1.1 1.2 Relative Intensity@20mA Normalize @25℃ 4020060100 80 Ambient Temperature(℃) -40-20 02060 40100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Fig.2 Relative Intensity vs. Forward Current Typical Electro-Optical Characteristics Curve 2.0 Fig.1 Forward current vs. Forward Voltage Forward Voltage(V) 100 Forward Current(mA) 1.0 0.1 1.0 Y CHIP 1000 Relative Intensity Normalize @20mA 3.04.05.0 7/10Page Forward Current(mA) 1.0101001000 PART NO.LBD101/2/3H3Y4G-XX-PF
Fig.3 Forward Voltage vs. Temperature Fig.5 Relative Intensity vs. Wavelength Ambient Temperature(℃) Relative Intensity@20mA Wavelength (nm) Forward Voltage@20mA Normalize @25℃ Fig.4 Relative Intensity vs. Temperature Ambient Temperature(℃) Relative Intensity@20mA Normalize @25℃ Typical Electro-Optical Characteristics Curve Forward Voltage(V) Fig.1 Forward current vs. Forward Voltage Forward Current(mA) Page Forward Current(mA) Fig.2 Relative Intensity vs. Forward Current Relative Intensity Normalize @20mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 0.1 1.0 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20-40 4020080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 G CHIP 8/10 PART NO.LBD101/2/3H3Y4G-XX-PF
Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 10 Seconds At 260°C 5°/sec max 260°C3sec Max 260°
60 Seconds Max
2°/sec max 00° 25° Preheat 120° Temp(°C) Time(sec) 100 150 2.Wave Soldering Profile Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 9/10 PART NO.LBD101/2/3H3Y4G-XX-PF
Reliability Test: MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. This test intended to see soldering well performed or not. 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. Solderability Test Solder Resistance Test MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 The purpose of this test is the resistance of the device under tropical for hours. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. 1.Ta=-40℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Ta=65℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs Thermal Shock Test High Temperature High Humidity Test Low Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Operating Life Test High Temperature Storage Test Test ItemTest Condition MIL-STD-202:103B JIS C 7021: B-11 JIS C 7021: B-12 MIL-STD-883:1008 JIS C 7021: B-10 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Reference StandardDescription LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 10/10Page PART NO.LBD101/2/3H3Y4G-XX-PF