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25.0 1.4 70.0
0.48 C/W
5.0 15.00 1.0 0.35 10.00 15.0360 0.10 PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS Common Source Power Gain Drain Efficiency Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Source Voltage Gate to Source Voltage -65 C to 150 C C A V Load Mismatch ToleranceVSWR Drain to Gate Voltage Relative 0.40 5.00Ids = mA, Vgs = 0V V, Vgs = 0V Ciss Crss Coss Vds = Idq = A, Vds = V, F = 0.40 Bvdss Idss Drain Breakdown Voltage V mA pF pF pF Common Source Output Capacitance Common Source Feedback Capacitance Idq = Idq = 0.40 500 Vgs = Rdson Saturation Resistance Forward TransconductancegM Vds = 10V, Vgs = 5V POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com 500 500 Common Source Input Capacitance 80 V Igss Vgs Idsat Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Saturation Current uA V Mho Ohm Amp PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS ELECTRICAL CHARACTERISTICS ( EACH SIDE ) RF CHARACTERISTICS ( 125.0 ABSOLUTE MAXIMUM RATINGS ( T = Gps 28.0 A, Vds = V, F = A, Vds = V, F = 28.0 28.0 Watts V MHz MHz MHz Watts Package Style 125.0 Vds = 0V Vgs = 10V HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description 28.0Vds = A, Vgs = VdsIds = A dB oo oo o SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTORLDMOS Vgs = 0V, F = 1 MHz28.0 Vds = Vgs = 0V, F = 1 MHz28.0 Vds = Vgs = 0V, F = 1 MHz28.0 REVISION 11/21/2014
25 C )
WATTS OUTPUT ) 200 polyfet rf devices LB2301 20:1 ROHS COMPLIANT This device is part of Polyfet's latest family of 28VDC LDMOS devices. Being an unmatched device and having low capacitances makes it ideal for broad band applications such as communications and broadcast. It is also suitable for various narrow band applications. Employing back-to-back gate diodes for enhanced ESD protection and having a high drain breakdown voltage makes this device highly rugged. The suitable frequency range of this device is 1-1100MHz V, Ids = 10 V, Vds = 10VVgs = 10 9- V
POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE ID & GM VS VGSIV CURVE Zin Zout PACKAGE DIMENSIONS IN INCHES LB2301 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com REVISION 11/21/2014 Tolerance .XX +/-0.01 .XXX +/-.005 inches