LA03W-DBK-2-PF

LA03W-DBK-2-PF LIGITEK | Alldatasheet

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06 - Jul. DOC. NO : QW0905- REV. : DATE : A - 2009 LA03W/DBK-2-PF LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Pb Lead-Free Parts 發行 DCC 立碁電子

1/5PagePART NO. LA03W/DBK-2-PF LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 2.54TYP 1.0MIN Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LDBK2040-PF 25.0MIN 1.0MIN2.54TYP + - □0.5 TYP 3.0 4.0 5.24.2 1.5 MAX + - Package Dimensions 5.5 14.2 4.5 16.0MIN 7.9 6.5 3.1

@20mA(mcd) Typ. Spectral halfwidth △λnm 470 Dominant wave length λDnm 4.0 Max. Forward voltage @ mA(V) 3.5 Typ. 550 Min. Viewing angle 2θ 1/2 (deg) 2/5Page LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only UNIT mA mA μA V mW 100 DBK Ratings 500 Ir -20 ~ +80 -30 ~ +100 120 Forward Current Peak Forward Current Duty 1/10@10KHz Parameter Operating Temperature Storage Temperature Reverse Current @5V Power Dissipation Typical Electrical & Optical Characteristics (Ta=25 ℃) Symbol ESD Topr Tstg IF PD IFP Absolute Maximum Ratings at Ta=25 ℃ Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. PART NO. LA03W/DBK-2-PF Static Electricity or power surge will damage the LED. Use of a c onductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Electrostatic Discharge( * )

Fig.5 Relative Intensity vs. Wavelength Typical Electro-Optical Characteristics Curve LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 1.0 3.0 4.0 0 1 1.0 Relative Intensity@20mA Wavelength (nm) 450 0.0 400 500 550 0.5 0.5 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Ambient Temperature(℃)Ambient Temperature(℃) 0-20-40 0.8 0-40 -2010080604020 0.0 60 1008040 Fig.4 Relative Intensity vs. Temperature 2.5 1.0 0.9 1.1 1.5 1.0 2.0 Fig.3 Forward Voltage vs. Temperature 1.2 3.0 Relative Intensity Normalize @20mA Forward Current(mA) Forward Current(mA)Forward Voltage(V) 2.0 5.0 1 10 0.0 0.5 1.0 1.5 2.0 100 1000 Fig.2 Relative Intensity vs. Forward CurrentFig.1 Forward current vs. Forward Voltage 2.5 3.0 100 1000 DBK CHIP Page 3/5 PART NO. LA03W/DBK-2-PF

60 Seconds Max

Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) 5°/sec max Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. 0°0 25° 120° Preheat 50 100 2°/sec max Temp(°C) 260° 260°C3sec Max Time(sec) 150 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Page 4/5PART NO. LA03W/DBK-2-PF

This test intended to see soldering well performed or not. The purpose of this test is the resistance of the device under tropical for hours. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec High Temperature High Humidity Test Thermal Shock Test Solder Resistance Test The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. (10min) (10min) 2.total 10 cycles 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202:103B JIS C 7021: B-11 This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, + 72hrs) High Temperature Storage Test Low Temperature Storage Test The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, + 72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, + 72hrs) Reliability Test: Test Item Test Condition Description MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 JIS C 7021: B-12 MIL-STD-883:1008 JIS C 7021: B-10 Reference Standard LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 5/5PagePART NO. LA03W/DBK-2-PF