L9SEFDGM42293-S2-PF LIGITEK | Alldatasheet
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DOC. NO : QW0905-L9SEFDGM42293/S2-PF REV. : B DATE : 10 - Jan. - 2011 DATA SHEET DUAL COLOR LED LAMPS LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only L9SEFDGM42293/S2-PF Lead-Free Parts Pb 發行 DCC 立碁電子
PART NO.L9SEFDGM42293/S2-PF LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation Package Dimensions 1/6Page 3.0±0.5 5.2 6.7±0.5 4.2 2.0TYP2.0TYP + _ + 1.5 MAX 4.0 3.0 1 _2 DGM SEF 1.ANODE GREEN 2.COMMON CATHODE 3.ANODE ORANGE 30°-30° -60° -60°
PART NO. L9SEFDGM42293/S2-PF 605 Dominant wave length λDnm Forward voltage @20mA(V) 1.7 Min. Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Typical Electrical & Optical Characteristics (Ta=25 ℃) Spectral halfwidth △λnmMATERIALPART NO Orange Green Emitted L9SEFDGM42293/S2-PF AlGaInP Water Clear Lens COLOR Viewing angle 2θ 1/2 (deg) Luminous intensity @20mA(mcd) 700 Typ. 3.5 Typ. 220 Min. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Absolute Maximum Ratings at Ta=25 ℃ Page 2/6 InGaN/GaN 525 95004000 ℃-20 ~ +80 Operating Temperature Storage Temperature Tstg -30 ~ +100 ℃ 500 120 100 DGM Reverse Current @5V Electrostatic Discharge( * ) ESD2000 Topr 10Ir Power Dissipation Peak Forward Current Duty 1/10@10KHz 120PD 90IFP Ratings Symbol Forward Current Parameter SEF 50IF μA V mW mA mA UNIT Peak wave length λPnm 518 Max. 2.6 4.0---
2.51.5 3/6 PART NO. L9SEFDGM42293/S2-PFPage SEF CHIP Typical Electro-Optical Characteristics Curve 500 3.0 2.5 1.5 1.0 0.5 0.0 2.0 60100 8002040-40-20 0.9 0.8 10080 3.02.0 1.0 0.5 0.0 650600550 1.2 1.1 1.0 6040200-20-40 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1000100101.0 1000 100 1.0 0.1 1.0 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Relative Intensity Normalize @20mA Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) Forward Current(mA) Fig.1 Forward current vs. Forward Voltage Forward Voltage(V) Relative Intensity@20mA Normalize @25℃ Ambient Temperature(℃) Fig.4 Relative Intensity vs. Temperature Forward Voltage@20mA Normalize @25℃ Wavelength (nm) Relative Intensity@20mA Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Fig.3 Forward Voltage vs. Temperature
Fig.3 Forward Voltage vs. TemperatureFig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Wavelength (nm) 450500 0.0 550600 0.5 0.00.8 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -20 Fig.5 Relative Intensity vs. Wavelength 1.0 Ambient Temperature(℃) -400 -20100 604080-40 Ambient Temperature(℃) 02040100 8060 2.0 0.9 1.0 1.0 0.5 1.5 1.1 1.2 3.0 2.5 2.0 Forward Current(mA) Relative Intensity Normalize @20mA 0.00.1 Forward Voltage(V) 1.0 1.0 0.5 1.5 Forward Current(mA) 100101000 Fig.2 Relative Intensity vs. Forward CurrentFig.1 Forward current vs. Forward Voltage 1000 100 3.0 2.5 Typical Electro-Optical Characteristics Curve DGM CHIP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. L9SEFDGM42293/S2-PF Page4/6
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only 2.Wave Soldering Profile Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 260°C3sec Max 5°/sec max Time(sec) 150100 Temp(°C) 260° 120° 25° 2°/sec max 50Preheat0
60 Seconds Max
Note:1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) L9SEFDGM42293/S2-PFPART NO.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Reference Standard MIL-STD-883:1008 JIS C 7021: B-10 JIS C 7021: B-12 MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 DescriptionTest ItemTest Condition Reliability Test: High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) Low Temperature Storage Test 1.Ta=-40℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. Page 6/6 MIL-STD-202:103B JIS C 7021: B-11 MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 High Temperature High Humidity Test 1.Ta=65℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. Thermal Shock Test (10min) (10min) 2.total 10 cycles Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. The purpose of this test is the resistance of the device under tropical for hours. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. L9SEFDGM42293/S2-PFPART NO.