L8711P POLYFET | Alldatasheet
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Technical content
40.0 2.0 50.0
2.50 C/W
1.7 13.00 2.0 0.40 8.00 8.060 0.20 PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS Common Source Power Gain Drain Efficiency Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Source Voltage Gate to Source Voltage -65 C to 150 C C A V Load Mismatch ToleranceVSWR Drain to Gate Voltage 20:1 Relative 0.40 0.20Ids = mA, Vgs = 0V V, Vgs = 0V Ciss Crss Coss Vds = Idq = A, Vds = V, F = 0.40 Bvdss Idss Drain Breakdown Voltage V mA pF pF pF Common Source Output Capacitance Common Source Feedback Capacitance Idq = Idq = 0.40 500 Vgs = 20V, Ids = Rdson Saturation Resistance Forward TransconductancegM Vds = 10V, Vgs = 5V POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com 500 500 Common Source Input Capacitance 36 V Igss Vgs Idsat Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Saturation Current 1 7 uA V Mho Ohm Amp PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS ELECTRICAL CHARACTERISTICS ( EACH SIDE ) RF CHARACTERISTICS ( 7.0 ABSOLUTE MAXIMUM RATINGS ( T = Gps 7.5 A, Vds = V, F = A, Vds = V, F = 7.5 7.5 Watts V MHz MHz MHz Watts Package Style 7.0 Vds = 0V Vgs = 30V Vgs = 20V, Vds = 10V HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description 7.5Vds = A, Vgs = VdsIds = A η dB oo oo o Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency. TM t SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTORLDMOS Vgs = 0V, F = 1 MHz7.5 Vds = Vgs = 0V, F = 1 MHz7.5 Vds = Vgs = 0V, F = 1 MHz7.5 REVISION 12/12/2001 P
25 C )
WATTS OUTPUT ) 150 polyfet rf devices L8711P
L1C 1 DIE ID, GM vs VG 100 0 2 4 6 8 10 12 14Vgs in Volts ID G M L1C 1DIE CAPACITANCE 100 1000 0 5 10 15 20 25 30 VDS IN VOLTS Coss Ciss Crss L8711P Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5Vdc 0 0.2 0.4 0.6 0.8 1 Pin in watts Pout Gain Efficiency@7W=50% POLYFET RF DEVICES POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE ID & GM VS VGSIV CURVE Zin Zout PACKAGE DIMENSIONS IN INCHES L8711P L1C 1 DIE IV 0 2 4 6 8 10 12 14 16 18 20 VDS IN VOLTS ID IN AMPS vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com REVISION 12/12/2001 Tolerance .XX +/-0.01 .XXX +/-.005 inches