L225 POLYFET | Alldatasheet
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Technical content
24.0 2.0 33.0
3.40 C/W
1.0 7.50 1.0 0.60 3.00 5.050 0.10 PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS Common Source Power Gain Drain Efficiency Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Source Voltage Gate to Source Voltage -65 C to 150 C200 C A V Load Mismatch ToleranceVSWR Drain to Gate Voltage 20:1 Relative 0.20 0.10Ids = mA, Vgs = 0V V, Vgs = 0V Ciss Crss Coss Vds = Idq = A, Vds = V, F = 0.20 Bvdss Idss Drain Breakdown Voltage V mA pF pF pF Common Source Output Capacitance Common Source Feedback Capacitance Idq = Idq = 0.20 850 Vgs = 20V, Ids = Rdson Saturation Resistance Forward TransconductancegM Vds = 10V, Vgs = 5V POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com 850 850 Common Source Input Capacitance 36 V Igss Vgs Idsat Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Saturation Current 1 7 uA V Mho Ohm Amp PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS ELECTRICAL CHARACTERISTICS ( EACH SIDE ) RF CHARACTERISTICS ( 6.0 ABSOLUTE MAXIMUM RATINGS ( T = Gps 12.5 A, Vds = V, F = A, Vds = V, F = 12.5 12.5 Watts V MHz MHz MHz Watts Package Style 6.0 Vds = 0V Vgs = 30V Vgs = 20V, Vds = 10V HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description 12.5Vds = A, Vgs = VdsIds = A η dB oo oo o Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency. TM t SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTORLDMOS Vgs = 0V, F = 1 MHz12.5 Vds = Vgs = 0V, F = 1 MHz12.5 Vds = Vgs = 0V, F = 1 MHz12.5 REVISION 03/08/2001
25 C )
WATTS OUTPUT )
L2C 1 DIE ID, GM vs VG 0.1 100 0 2 4 6 8 10 12 14 Vgs in Volts ID GM L2C1DIE CAPACITANCE 100 0 2 4 6 8 10 12 14 VDS IN VOLTS Coss Ciss Crss L225 POUT VS PIN F=850MHZ, VDS=12.5V,Idq=.2A 0 0.2 0.4 0.6 0.8 1 PIN IN WATTS 8.00 10.00 12.00 14.00 16.00 18.00 20.00 POUT GAIN Efficiency=50% POLYFET RF DEVICES POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE ID & GM VS VGSIV CURVE S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES L225 L2C 1 DIE IV 0 2 4 6 8 10 12 14 16 18 20 VDS IN VOLTS ID IN AMPS vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com REVISION 03/08/2001 Tolerance .XX +/-0.01 .XXX +/-.005 inches