KTD998 JIANGSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors KTD998 TRANSISTOR (NPN)

FEATURES

z High Current and Power Capability z High Power Amplifier Application MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 120 V Collector-emitter breakdown voltage V (BR)CEO I C =50mA,I B =0 120 V Emitter-base breakdown voltage V (BR)EBO I E =100µA,I C =0 5 V Collector cut-off current I CBO V CB =120V,I E =0 10 μA Emitter cut-off current I EBO V EB =5V,I C =0 10 μA DC current gain h FE V CE =5V, I C =1A 55 160 Collector-emitter saturation voltage V CE(sat) I C =5A,I B =500mA 2.5 V Base-emitter voltage V BE V CE =5V, I C =5A 1.5 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 170 pF Transition frequency f T V CE =5V,I C =1A

12 MHz

Symbol Parameter Value Unit V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 120 V V EBO Emitter-Base Voltage 5 V I C Collector Current 10 A P C Collector Power Dissipation 3 W R θJA Thermal Resistance From Junction To Ambient 42 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 B,Nov,2014

www.cj-elec.com 2 B,Nov,2014 M inM a x M inM a x A 4. 600 5 .000 0. 1 81 0. 197 A 1 1. 200 1 .600 0. 0 47 0. 063 b 0. 800 1 .200 0. 0 31 0. 047 b1 2. 800 3 .200 0. 1 10 0. 126 b2 1. 800 2 .200 0. 0 71 0. 087 c 0. 500 0 .700 0. 0 20 0. 028 c 1 1. 450 1 .650 0. 0 57 0. 065 D 1 5. 4 50 15. 850 0. 6 08 0. 624 E 1 3. 7 00 14. 100 0. 5 39 0. 555 F 1 1 3. 4 00 13. 800 0. 5 28 0. 543 F 2 9. 400 9 .800 0. 3 70 0. 386 L 3 9. 9 00 40. 300 1. 5 71 1. 587 L1 2 3. 2 00 23. 600 0. 9 13 0. 929 L2 2 0. 3 00 20. 600 0. 7 99 0. 811 Φ 6. 900 7 .100 0. 2 72 0. 280 G 5. 150 5 .550 0. 2 03 0. 219 e H h 0. 000 0 .300 0. 0 00 0. 012 5. 000 R E F 0. 12 6 R E F 0. 13 0 R E F 0. 2 15 T Y P 0. 19 7 R E F 0. 53 0 R E F S y m bol D im e n s io n s I n M ill im e te r s 5. 450 T Y P D im e n s io n s In In c h e s 3. 200 R E F 3. 300 R E F 13 .450 R E F