KTD2061 JIANGSU | Alldatasheet
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TO – 220F 1. BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors KTD2061 TRANSISTOR (NPN)
FEATURES
z High Transition Frequency z High Current z Complementary to KTB1369 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 200 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA,I B =0 180 V Emitter-base breakdown voltage V (BR)EBO I E =10µA,I C =0 5 V Collector cut-off current I CBO V CB =200V,I E =0 1 μA Emitter cut-off current I EBO V EB =5V,I C =0 1 μA DC current gain h FE V CE =10V, I C =400mA 70 240 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =50mA 1 V Base-emitter voltage V BE V CE =5V, I C =500mA 1 V Transition frequency f T V CE =10V,I C =400mA
100 MHz
Symbol Paramete r Value Unit V CBO Collector-Base Voltage 200 V V CEO Collector-Emitter Voltage 180 V V EBO Emitter-Base Voltage 5 V I C Collector Current 2 A P C Collector Power Dissipation 2 W R θJA Thermal Resistance From Junction To Ambient 62.5 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 C,May,2016 1 32
www.cj-elec.com 2 C,May,2016 Min. Max. Min. Max. A 4.300 4.700 0.169 0.185 A2 2.800 3.200 0.110 0.126 A3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 D 9.960 10.360 0.392 0.408 E 14.800 15.200 0.583 0.598 e F Ф h 0.000 0.300 0.000 0.012 L 28.000 28.400 1.102 1.118 L1 1.700 1.900 0.067 0.075 L2 0.900 1.100 0.035 0.043 2.700 REF. 3.500 REF. 0.138 REF. 0.106 REF. 0.800 REF. 0.500 REF. 0.031 REF. 0.020 REF. Symbol Dimensions In Millimeters Dimensions In Inches 2.540 TYP. 0.100 TYP. 1.300 REF. 0.051 REF.