KTD2058 JIANGSU | Alldatasheet

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CTRONICS TECHNOLOGY CO., LTD TO -220-3L Plastic-Encapsulate Transistors KTD2058 TRANSIST OR ( NPN) FEA TURES Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX) MAXIMUM RATINGS (Ta=25℃ unless otherw ise noted) Symbol Paramete r Value Unit VCBO Collector-Bas e Voltage 60 V VCEO Collector-Emitter V oltage 60 V VEBO Emitter-Base Vo ltage 7 V IC Collector Curr ent -Continuous 3 A PC Collector Po wer Dissipation 2 W Tj Junction T emperature 150 ℃ Tstg St orage Temperature Range -55-150 ℃ ELECTRICAL CHARA CTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collecto r-base breakdown voltage V(BR)CB O I C=100µA, IE=0 60 V Collecto r-emitter breakdown voltage V(BR)CE O I C=50mA, IB=0 60 V Emitter-ba se breakdown voltage V(BR )EBO I E=100µA, IC=0 7 V Collecto r cut-off current ICBO V CB=60V , IE=0 100 µA Emitter cut-off current IEBO V EB=7V , IC=0 100 µA DC curr ent gain hFE V CE=5V , IC=0 .5A 60 200 Collecto r-emitter saturation voltage VCE(sa t) I C=2A, IB=0.2A 1 V Base-emitter vo ltage VBE(on) V CE=5V , IC=0.5A 1 V Tr ansition frequency fT V CE=5V , IC=0.5 A 3 MHz Collecto r output capacitance Cob V CB=10V , IE=0 , f=1MHz 35 pF Tu rn-on Time ton 0.65 St orage Time tstg 1.3 Swi tching time Fall Time tf 0.65 us CLA SSIFICATION OF h FE Rank O Y Range 60-120 100-200 TO -220 3L 1. B A S E 2. COLLECTOTR 3. EMITTER www.cj-elec.com 1 C,May,2016 1 32

0.1 1 10 100 1000 10000 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 100 1000 0 25 50 75 100 125 150 500 1000 1500 2000 2500 3000 10 100 1000 200 400 600 800 1000 1200 10 100 1000 100 125 150 175 200 225 250 275 300 10 100 1000 100 1000 23456789 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 CAPACITANCE C (p REVERSE VOLTAG E V (V) Cob Cib f=1MHz IE=0/IC=0 Ta=25℃ VCB/ VEBCob/ Cib —— Ta= 100℃ Ta= 25℃ COLLCETOR CURRENT IC (mA) BASE-EMM ITER VOLTAGE VBE (mV) IC VBE COMMO N EMITTER VCE=5V COLLECTO R POWER DISSIPATION PC (mW) AM BIENT TEMPERATURE Ta ( PC —— Ta BASE-EMITT ER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=100℃ Ta=25℃ ICVB Esat —— COLLECTOR-EMITTER SATURATION VO LTAGE VCE sat (mV) COLLECTOR CURRENT IC (mA) ICVC Esat —— Ta=100℃ Ta=25℃ β=10 3000 30003000 3000 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (m COM MON EMITTER VCE=5V Ta=25℃ Ta=100℃ IChFE — 10m A A A A A mA A A A IB=1mA COLLECTOR CURRENT IC (A) COLLECTOR-EM ITTER VOLTAGE VCE (V) C OMMON EMITTER Ta=25℃ S tatic Characteristic www.cj-elec.com 2 C,May,2016 T ypical Characteristics

www.cj-elec.com 3 C,May,2016 M in Max Min Max A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 Φ 3.735 3.935 0.147 0.155 Symbol Dimensions In Millimeters Dimensions In Inches 0.100 TYP2.540 TYP