KTD1302 JIANGSU | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTD1302 TRANSISTOR (NPN)
FEATURES
z Audio Muting Application z High Emitter-Base Voltage MAXIMUM RATINGS (T a =25℃ unless otherwise noted) MARKING: 1302 ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =0.1mA,I E =0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =0.1mA,I C =0 12 V Collector cut-off current I CBO V CB =25V,I E =0 100 nA Emitter cut-off current I EBO V EB =12V,I C =0 100 nA h FE(1) (FOR) V CE =2V, I C =4mA 200 800 DC current gain h FE(2)(REV) V CE =2V, I C =4mA 20 Collector-emitter saturation voltage V CE(sat) I C =100mA,I B =10mA 0.25 V Base-emitter saturation voltage V BE(sat) I C =100mA,I B =10mA 1 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 10 pF Transition frequency f T V CE =10V,I C =1mA, f=100MHz MHz Symbol Parameter Value Unit V CBO Collector-Base Voltage 25 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 12 V I C Collector Current 300 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 D,Nov,2015 E
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 2 D,Nov,2015 E
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